ISC058N04NM5ATMA1 vs ISC009N06LM5ATMA1 Comparison

Detailed side-by-side comparison of ISC058N04NM5ATMA1 by Infineon and ISC009N06LM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter ISC058N04NM5ATMA1 ISC009N06LM5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 40V Normal Level —
Transistor Type N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 40 V 60 V
Continuous Drain Current (ID, Tc=25C) 63 A —
Continuous Drain Current (ID, Ta=25C) 17 A —
On-Resistance Rds(on) max @ VGS=10V, ID=31A 5.8 mOhm —
Gate Threshold Voltage VGS(th) typ 3.4 V —
Power Dissipation (TA=25C) 3 W —
Power Dissipation (TC=25C) 42 W —
Package PG-TDSON-8 FL (SuperSO8 5x6 mm) PG-TSON-8-3 (SuperSO8 5x6)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 5 trench MOSFET OptiMOS 5 60V N-channel trench MOSFET
Operating Temperature Range -55C to +175C -55 C to +175 C
RoHS Compliance RoHS Compliant —
MSL (Moisture Sensitivity Level) MSL per JEDEC J-STD-020 —
Gate Drive Level Normal Level (10V VGS recommended) —
Series — OptiMOS 5
Continuous Drain Current (ID) at Ta — 41 A
Continuous Drain Current (ID) at Tc — 348 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS maximum rating]
Gate-Source Threshold (VGS(th)) — [DATA_NEEDED: VGS threshold typical]
On-Resistance RDS(on) max at VGS=10V — 0.9 mOhm
Power Dissipation at Ta (PD) — 3 W
Power Dissipation at Tc (PD) — 214 W
MSL Level — [DATA_NEEDED: MSL rating]
RoHS Status — Compliant

Datasheets & Resources

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