ISC058N04NM5ATMA1 vs ISC009N06LM5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC058N04NM5ATMA1 disebabkan oleh Infineon dan ISC009N06LM5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC058N04NM5ATMA1 ISC009N06LM5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 40V Normal Level —
Jenis Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 40 V 60 V
Continuous Drain Current (ID, Tc=25C) 63 A —
Continuous Drain Current (ID, Ta=25C) 17 A —
On-Resistance Rds(on) max @ VGS=10V, ID=31A 5.8 mOhm —
Gate Threshold Voltage VGS(th) typ 3.4 V —
Power Dissipation (TA=25C) 3 W —
Power Dissipation (TC=25C) 42 W —
Kemasan PG-TDSON-8 FL (SuperSO8 5x6 mm) PG-TSON-8-3 (SuperSO8 5x6)
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS 5 trench MOSFET OptiMOS 5 60V N-channel trench MOSFET
Gambaran Suhu Operasi -55C to +175C -55 C to +175 C
RoHS Compliance RoHS Compliant —
MSL (Moisture Sensitivity Level) MSL per JEDEC J-STD-020 —
Gate Drive Level Normal Level (10V VGS recommended) —
Series — OptiMOS 5
Continuous Drain Current (ID) at Ta — 41 A
Continuous Drain Current (ID) at Tc — 348 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS maximum rating]
Gate-Source Threshold (VGS(th)) — [DATA_NEEDED: VGS threshold typical]
On-Resistance RDS(on) max at VGS=10V — 0.9 mOhm
Power Dissipation at Ta (PD) — 3 W
Power Dissipation at Tc (PD) — 214 W
Aras MSL — [DATA_NEEDED: MSL rating]
Status RoHS — Compliant

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga