ISC800P06LMATMA1 vs ISC015N06NM5ATMA1 Comparison
Detailed side-by-side comparison of ISC800P06LMATMA1 by Infineon and ISC015N06NM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC800P06LMATMA1
ISC800P06LMATMA1 - 60V P-CH MOSFET, 19.6A, TDSON-8 | Infineon
ISC800P06LMATMA1 β Active
Specification Comparison
| Parameter | ISC800P06LMATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.61 | $0.62 |
| FET Type | P-Channel | β |
| Drain-Source Voltage (VDS) | -60 V | β |
| Continuous Drain Current (ID) at TC | 19.6 A | β |
| Power Dissipation (PD) at TC | 83 W | β |
| Package | PG-TDSON-8 (TDSON EP, 5x6 mm) | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS trench MOSFET | Trench MOSFET (OptiMOS 5) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | β |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at VGS=10V] | β |
| Operating Temperature Range | -55 C to +175 C (junction) | -55 C to +175 C |
| Pin Count | 8 | β |
| Lead-Free | Yes (per Infineon product page) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| Avalanche Rated | Yes (per Infineon datasheet) | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 5 |
| Polarity / Channel Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at TA=25C | β | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | β | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | β | 1.5 mOhm |
| Total Power Dissipation (TA) | β | 3 W |
| Total Power Dissipation (TC) | β | 188 W |
| MSL (Moisture Sensitivity Level) | β | 1 |