ISC800P06LMATMA1 vs ISC015N06NM5ATMA1 Vergleich
Detaillierter Direktvergleich von ISC800P06LMATMA1 von Infineon und ISC015N06NM5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | ISC800P06LMATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,61 | $0,62 |
| FET Type | P-Channel | — |
| Drain-Source Voltage (VDS) | -60 V | — |
| Continuous Drain Current (ID) at TC | 19.6 A | — |
| Power Dissipation (PD) at TC | 83 W | — |
| Gehäuse | PG-TDSON-8 (TDSON EP, 5x6 mm) | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Montageart | Surface Mount | Surface Mount |
| Technology | OptiMOS trench MOSFET | Trench MOSFET (OptiMOS 5) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at VGS=10V] | — |
| Betriebstemperaturbereich | -55 C to +175 C (junction) | -55 C to +175 C |
| Pin-Anzahl | 8 | — |
| Lead-Free | Yes (per Infineon product page) | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 (per JEDEC J-STD-020) | — |
| Avalanche Rated | Yes (per Infineon datasheet) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TA=25C | — | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | — | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | — | 1.5 mOhm |
| Total Power Dissipation (TA) | — | 3 W |
| Total Power Dissipation (TC) | — | 188 W |
| MSL (Moisture Sensitivity Level) | — | 1 |