ISCH99N04NM7VATMA1 vs ISC011N04NM7VATMA1 Comparison

Detailed side-by-side comparison of ISCH99N04NM7VATMA1 by Infineon and ISC011N04NM7VATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISCH99N04NM7VATMA1

ISCH99N04NM7VATMA1 - 40V OptiMOS 7 N-Channel MOSFET | Infineon

ISCH99N04NM7VATMA1 βœ“ Active
Infineon
ISC011N04NM7VATMA1

ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon

ISC011N04NM7VATMA1 βœ“ Active

Specification Comparison

Parameter ISCH99N04NM7VATMA1 ISC011N04NM7VATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.48 $0.41
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 7 β€”
FET Type N-Channel N-Channel
Drain-Source Voltage (V_DS) 40 V β€”
Continuous Drain Current at Ta (I_D) 40 A β€”
Pulsed Drain Current at Tc (I_DM) 284 A β€”
Power Dissipation at Ta (P_D) 3 W β€”
Power Dissipation at Tc (P_D) 150 W β€”
Gate Threshold Voltage (V_th) Up to 3.2 V β€”
Package PG-TDSON-8 (TDSON-8 FL) PG-TDSON-8 (source-down)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant β€”
Technology OptiMOS 7 Trench Power MOSFET Trench MOSFET, silicon
Operating Mode Enhancement-mode β€”
Target Application 12 V to 48 V Motor Drives β€”
Product Family β€” OptiMOS 7 Power-Transistor
Drain-Source Voltage (VDS) β€” 40 V
Continuous Drain Current (ID) at TA=25Β°C β€” 38 A
Continuous Drain Current (ID) at TC β€” 256 A
On-Resistance RDS(on) max @ VGS=10V β€” 1.1 mΞ©
Power Dissipation (TA) β€” 3 W
Power Dissipation (TC) β€” 136 W
Gate Threshold Voltage (Vth) β€” Up to 3.2 V
Short-Circuit Withstand β€” Yes (current-limited)
Operating Temperature Range β€” -55 Β°C to +175 Β°C (TJ)
RoHS Compliance β€” Compliant (per Infineon product page)
MSL Level β€” MSL 1 (per JEDEC J-STD-020)

Datasheets & Resources

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