ISCH99N04NM7VATMA1 vs ISC011N04NM7VATMA1 Comparison
Detailed side-by-side comparison of ISCH99N04NM7VATMA1 by Infineon and ISC011N04NM7VATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | ISCH99N04NM7VATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current at Ta (I_D) | 40 A | — |
| Pulsed Drain Current at Tc (I_DM) | 284 A | — |
| Power Dissipation at Ta (P_D) | 3 W | — |
| Power Dissipation at Tc (P_D) | 150 W | — |
| Gate Threshold Voltage (V_th) | Up to 3.2 V | — |
| Package | PG-TDSON-8 (TDSON-8 FL) | PG-TDSON-8 (source-down) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | — |
| Technology | OptiMOS 7 Trench Power MOSFET | Trench MOSFET, silicon |
| Operating Mode | Enhancement-mode | — |
| Target Application | 12 V to 48 V Motor Drives | — |
| Product Family | — | OptiMOS 7 Power-Transistor |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TA=25°C | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.1 mΩ |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 136 W |
| Gate Threshold Voltage (Vth) | — | Up to 3.2 V |
| Short-Circuit Withstand | — | Yes (current-limited) |
| Operating Temperature Range | — | -55 °C to +175 °C (TJ) |
| RoHS Compliance | — | Compliant (per Infineon product page) |
| MSL Level | — | MSL 1 (per JEDEC J-STD-020) |