ISCH99N04NM7VATMA1 - 40V OptiMOS 7 N-Channel MOSFET | Infineon
MPN: ISCH99N04NM7VATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.96 | $0.96 |
| 10 | $0.86 | $8.60 |
| 100 | $0.72 | $72.00 |
| 500 | $0.63 | $315.00 |
| 1,000 | $0.55 | $550.00 |
| 3,000 | $0.48 | $1,440.00 |
ISCH99N04NM7VATMA1 Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that uses an insulated gate to modulate conduction between source and drain terminals. The OptiMOS 7 family represents Infineon's 7th-generation trench MOSFET technology for 12 V to 48 V power systems, where it sits within the broader taxonomy of discrete semiconductors > MOSFETs > N-channel power MOSFETs > power management switches. Compared to older planar generations, OptiMOS 7 reduces R_DS(on) per area and tightens switching loss/figure-of-merit for high-frequency converters.
Key features include an industry-leading R_DS(on) optimized for 40 V systems, up to 3x wider Safe Operating Area versus OptiMOS 6, and a controlled transconductance (g_fs) that is 70% lower than prior generations. A higher gate threshold voltage (V_th up to 3.2 V) provides enhanced induced turn-on ruggedness and inherent short-circuit current limitation, while the price-performance-optimized silicon enables cost-effective designs for harsh-environment applications.
Typical applications include 12 V to 48 V brushless DC (BLDC) motor drives in e-mobility, battery-powered power tools, e-bike controllers, cordless vacuum cleaners, low-voltage drives in robotics, and telecom 48 V point-of-load converters. The wide SOA and high pulse-current handling also make it suitable for automotive ECU loads and industrial automation modules operating near rated current limits.
When designing with the ISCH99N04NM7VATMA1, place the source pad (PG-TDSON-8 FL exposed pad) over a sufficiently large copper pour to keep the junction below the maximum 175 C rating under worst-case SOA conditions. Because of the high V_th (up to 3.2 V), the device tolerates induced turn-on from fast dV/dt edges better than lower-Vth predecessors, simplifying gate-drive design. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer product page alone.
Drop-in alternatives for ISCH99N04NM7VATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with ISCH99N04NM7VATMA1 (same form factor and footprint) — differing in Package, Operating Temperature Range, Technology, MSL Level, RoHS Status.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
ISC011N04NM7VATMA1
✅ Drop-In✓ In Stock
$0.41 / Unit
View Datasheet →IQEH50NE2LM7ZCGATMA1
✅ Drop-In✓ In Stock
$1.42 / Unit
View Datasheet →IPC100N04S5L1R5ATMA1
✅ Drop-In✓ In Stock
$1.18 / Unit
View Datasheet →IQEH54NE2LM7UCGATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1.95 / Unit
View Datasheet →BSC019N04LSTATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1.21 / Unit
View Datasheet →ISCH99N04NM7VATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 7 |
| FET Type | N-Channel |
| Drain-Source Voltage (V_DS) | 40 V |
| Continuous Drain Current at Ta (I_D) | 40 A |
| Pulsed Drain Current at Tc (I_DM) | 284 A |
| Power Dissipation at Ta (P_D) | 3 W |
| Power Dissipation at Tc (P_D) | 150 W |
| Gate Threshold Voltage (V_th) | Up to 3.2 V |
| Package | PG-TDSON-8 (TDSON-8 FL) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| Technology | OptiMOS 7 Trench Power MOSFET |
| Operating Mode | Enhancement-mode |
| Target Application | 12 V to 48 V Motor Drives |
ISCH99N04NM7VATMA1 Pin Configuration
| Pin 1 | Gate — Gate drive input |
| Pin 2 | Source — Source connection |
| Pin 3 | Source — Source connection |
| Pin 4 | Source (Exposed Pad) — Source and primary thermal path |
| Pin 5 | Drain — Drain connection |
| Pin 6 | Drain — Drain connection |
| Pin 7 | Drain — Drain connection |
| Pin 8 | Drain — Drain connection |
Safe Operating Area - DC (V_DS vs I_D)
Typical Applications
ISCH99N04NM7VATMA1 is suitable for 6 applications: 24V Brushless DC (BLDC) Motor Drive, Cordless Power Tool Motor Control, Telecom 48V Point-of-Load Converter, E-Bike and E-Scooter Motor Controller, Robotics and Low-Voltage Industrial Drives, Battery Management System (BMS) Protection Switch.
24V Brushless DC (BLDC) Motor Drive
The ISCH99N04NM7VATMA1's 40 V drain-source breakdown and 284 A pulsed drain current make it ideal for 24 V BLDC motor half-bridge switches in e-bike controllers, cordless vacuum cleaners, and small industrial pumps. Its 3x wider SOA versus OptiMOS 6 absorbs motor stall transients without tripping protection, while the V_th up to 3.2 V rejects induced turn-on from fast dV/dt switching edges generated by the complementary MOSFET in the half-bridge. Place the PG-TDSON-8 FL exposed pad over a 50 mm² copper pour and gate-drive with a 10 Ω gate resistor to balance switching loss and ringing. The trade-off versus a dedicated motor-drive gate driver IC (e.g., 6EDL7141) is discrete BOM cost vs integrated protection.
Recommended
Cordless Power Tool Motor Control
The 40 V V_DS rating and 150 W power dissipation at Tc suit 18 V to 36 V cordless drill, impact-driver, and saw motor-control boards where the battery pack voltage can overshoot under regenerative braking. The ISCH99N04NM7VATMA1's 70% lower transconductance (g_fs) improves current sharing between parallel MOSFETs - critical when two or three devices are paralleled to handle 100 A+ motor currents. The enhanced ruggedness also handles the motor's back-EMF during sudden reversals. Trade-off: the higher V_th (3.2 V max) requires a gate-driver supply of at least 6 V to fully enhance, which is above typical 5 V logic levels - use a dedicated bootstrap gate driver.
Recommended
Telecom 48V Point-of-Load Converter
In 48 V telecom point-of-load (PoL) converters stepping down to 12 V or 5 V rails, the ISCH99N04NM7VATMA1 serves as the high-side or low-side switch in a buck topology. Its 40 V V_DS provides 14% headroom above the 41 V telecom transient envelope, while the controlled transconductance minimizes voltage overshoot and reduces ringing on the SW node - critical for EMI compliance with CISPR 22 Class B. The exposed PG-TDSON-8 FL pad simplifies thermal management when bolted to a heatsink or bonded to a large inner copper layer. Trade-off: OptiMOS 7 is optimized for 40 V, so above 48 V input you would need a 60 V or 80 V alternative.
Recommended
E-Bike and E-Scooter Motor Controller
E-bike and e-scooter traction controllers run on 24 V to 48 V battery packs and demand MOSFETs that survive repetitive peak currents during hill-climbing. The ISCH99N04NM7VATMA1's 284 A pulsed rating and 150 W power dissipation at Tc absorb those peaks, while the wide SOA tolerates back-EMF events during regenerative braking. The 3.2 V maximum V_th improves noise immunity against inverter-induced common-mode transients. Trade-off: the device is not AEC-Q qualified, so it is appropriate for personal e-mobility but not automotive OEM traction inverters - for those, source the AEC-Q100 automotive-grade equivalent from Infineon.
Recommended
Robotics and Low-Voltage Industrial Drives
Industrial robotic joints, AGV (automated guided vehicle) wheel motors, and small servo drives use 24 V to 48 V DC bus rails switched at high PWM frequency to drive precision actuators. The ISCH99N04NM7VATMA1's low transconductance and tight V_th distribution ensure predictable current sharing across paralleled devices, which is essential for the multi-MOSFET half-bridges in 50 A to 200 A robotics drive stages. The wider SOA also supports the rare but stressful short-circuit event during a stalled joint. Trade-off: at switching frequencies above 100 kHz, switching losses dominate - verify gate-charge figures in the datasheet for your topology.
Recommended
Battery Management System (BMS) Protection Switch
In lithium-ion battery packs (24 V to 48 V nominal), the ISCH99N04NM7VATMA1 can serve as the high-side protection switch that disconnects the load during over-current, short-circuit, or overtemperature events. Its 284 A pulsed rating handles the inrush of motor-start capacitors, and the enhanced short-circuit ruggedness - enabled by V_th up to 3.2 V and inherent current limiting - prevents catastrophic failure during a pack short. The PG-TDSON-8 FL package fits within the compact BMS PCB footprint. Trade-off: a dedicated load-switch IC (e.g., BTS3028SDR) provides integrated protection logic, while the discrete MOSFET approach gives flexibility on trip thresholds.
Recommended
Recommended Products Summary
Engineering reference data for ISCH99N04NM7VATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | ISC011N04NM7VATMA1 | IQEH50NE2LM7ZCGATMA1 | IPC100N04S5L1R5ATMA1 | IQEH54NE2LM7UCGATMA1 | BSC019N04LSTATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8 | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same |
| V_DS Max | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| Technology Generation | OptiMOS 7 | OptiMOS 7 | OptiMOS family | OptiMOS 5 | OptiMOS family | OptiMOS 5/6 |
| SOA Improvement vs Prior Gen | 3x vs OptiMOS 6 | Same OptiMOS 7 family | OptiMOS family | OptiMOS 5 - narrower SOA | OptiMOS family | OptiMOS 5/6 |
Key Differentiators
- 3x wider Safe Operating Area versus OptiMOS 6 (vs Prior OptiMOS 6 40 V family members)
- Higher gate threshold voltage up to 3.2 V (vs OptiMOS 5 / 6 generations)
- 70% lower transconductance than OptiMOS 6 (vs OptiMOS 6 40 V family)
- Highest pulsed drain current in 40 V PG-TDSON-8 class (vs ISC011N04NM7VATMA1 and similar Infineon 40 V family members)
Design Notes
The PG-TDSON-8 FL exposed pad is electrically Source AND the primary thermal path. Recommended layout: 50 mm² copper pour on the top layer plus a thermal via array (9 to 16 vias, 0.3 mm diameter) to an inner copper plane. Without this, the R_thJA rises and the 150 W Tc rating cannot be achieved. Estimate: at 3 W dissipation in still air (Ta=25 C) the junction rises roughly 75 C above ambient; with a 50 mm² 2 oz copper pour it rises about 50 C.
Place the gate-drive resistor (typically 10 Ω) as close as possible to the gate pin to minimize parasitic loop inductance and dampen the LC resonance with C_iss. Add a 10 kΩ pull-down resistor from gate to source to keep the MOSFET off during controller power-up, preventing accidental turn-on from transient leakage on the gate pin. Use Kelvin source connection if the layout permits - this eliminates the source-stray voltage drop from corrupting the gate-drive signal.
Do not exceed V_GS_max of ±20 V (typical for OptiMOS family). Many gate drivers source 12 V or 15 V which is within limits, but verify during fault conditions when the gate-driver supply can overshoot. Also, do not rely on the body diode for sustained freewheeling in synchronous-rectifier topologies - check the reverse-recovery behavior in the datasheet or use an external SiC Schottky in parallel. Finally, avoid shorting drain to source below the rated avalanche energy, even within absolute maximum ratings - the ISCH99N04NM7V is avalanche-rated, but repeated avalanche events degrade R_DS(on) over time.
Keep the high-dV/dt switching loop (drain-Source power loop) physically small to minimize parasitic inductance, which would otherwise cause voltage overshoot beyond 40 V and trigger avalanche breakdown. Recommended: source-sense (Kelvin) connection from the gate-driver ground to the source pad, and a tightly-coupled input bypass capacitor. Estimate: each nanohenry of stray inductance contributes roughly 10 V of overshoot per 100 A/ns switching edge.
Compliance Information
RoHS compliant per Infineon product page. Not AEC-Q100 qualified in the standard part number suffix; automotive-grade variants are available separately from Infineon. Halogen-free per Infineon datasheet packaging information.
