ISZ019N03L5SATMA1 vs BSC0502NSIATMA1 Comparison
Detailed side-by-side comparison of ISZ019N03L5SATMA1 by Infineon and BSC0502NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISZ019N03L5SATMA1 - 30V 1.9mΞ© OptiMOS 5 N-Channel MOSFET | Infineon
ISZ019N03L5SATMA1 β ActiveInfineon
BSC0502NSIATMA1
BSC0502NSIATMA1 - 30V N-Channel OptiMOS 5 MOSFET 2.3mOhm | Infineon
BSC0502NSIATMA1 β ActiveSpecification Comparison
| Parameter | ISZ019N03L5SATMA1 | BSC0502NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.85 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 5 (<= 40V) | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at TA=25C | 22 A | β |
| Continuous Drain Current (ID) at TC=25C | 40 A | β |
| RDS(on) at VGS=10V | 1.9 mΞ© (typical, ID=20A) | β |
| Gate Threshold Voltage (VGS(th)) | 2 V (typical) | β |
| Gate-Source Voltage Rating (VGS) | Β±20 V | β |
| Total Gate Charge (Qg) | 44 nC at VGS=10V | β |
| Input Capacitance (Ciss) | 2800 pF at VDS=15V | β |
| Package | PG-TSDSON-8-FL (5x6 mm) | PG-TDSON-8 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (TJ max) | -55C to +150C |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| RoHS / REACH | Compliant | β |
| Avalanche Rated | Yes | β |
| RG-tested | 100% | β |
| FET Type | β | N-Channel |
| Technology | β | OptiMOS 5 (Trench MOSFET) |
| Drain-Source Voltage (VDS) Max | β | 30 V |
| Continuous Drain Current (ID) at TC | β | 100 A |
| Continuous Drain Current (ID) at TA | β | 26 A |
| RDS(on) Max at VGS=10V | β | 2.3 mOhm |
| Gate Charge QG (0V to 4.5V) Typ | β | 9.0 nC |
| Output Charge QOSS Typ | β | 13.5 nC |
| Power Dissipation at TA (Ta=25C) | β | 2.5 W |
| Power Dissipation at TC (Tc=25C) | β | 43 W |
| Gate Threshold Voltage VGS(th) Typ | β | [DATA_NEEDED: VGS(th) typical value] |
| RoHS Status | β | Compliant |