ISZ019N03L5SATMA1 vs BSC0502NSIATMA1 比較
詳細並排比較 ISZ019N03L5SATMA1 由 Infineon 與 BSC0502NSIATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
ISZ019N03L5SATMA1 - 30V 1.9mΩ OptiMOS 5 N-Channel MOSFET | Infineon
ISZ019N03L5SATMA1 ✓ 啟用中
規格比較
| 參數 | ISZ019N03L5SATMA1 | BSC0502NSIATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 (<= 40V) | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 22 A | — |
| Continuous Drain Current (ID) at TC=25C | 40 A | — |
| RDS(on) at VGS=10V | 1.9 mΩ (typical, ID=20A) | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typical) | — |
| Gate-Source Voltage Rating (VGS) | ±20 V | — |
| Total Gate Charge (Qg) | 44 nC at VGS=10V | — |
| Input Capacitance (Ciss) | 2800 pF at VDS=15V | — |
| 封裝 | PG-TSDSON-8-FL (5x6 mm) | PG-TDSON-8 (SuperSO8 5x6) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55C to +175C (TJ max) | -55C to +150C |
| MSL 等級 | 1 (per JEDEC J-STD-020) | — |
| RoHS / REACH | Compliant | — |
| Avalanche Rated | Yes | — |
| RG-tested | 100% | — |
| FET Type | — | N-Channel |
| Technology | — | OptiMOS 5 (Trench MOSFET) |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at TC | — | 100 A |
| Continuous Drain Current (ID) at TA | — | 26 A |
| RDS(on) Max at VGS=10V | — | 2.3 mOhm |
| Gate Charge QG (0V to 4.5V) Typ | — | 9.0 nC |
| Output Charge QOSS Typ | — | 13.5 nC |
| Power Dissipation at TA (Ta=25C) | — | 2.5 W |
| Power Dissipation at TC (Tc=25C) | — | 43 W |
| Gate Threshold Voltage VGS(th) Typ | — | [DATA_NEEDED: VGS(th) typical value] |
| RoHS 狀態 | — | Compliant |