ISZ15EP15LMATMA1 vs IQE036N08NM6CGATMA1 Comparison
Detailed side-by-side comparison of ISZ15EP15LMATMA1 by Infineon and IQE036N08NM6CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISZ15EP15LMATMA1
ISZ15EP15LMATMA1 - 150V P-Channel OptiMOS MOSFET | Infineon
ISZ15EP15LMATMA1 β ActiveInfineon
IQE036N08NM6CGATMA1
IQE036N08NM6CGATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon
IQE036N08NM6CGATMA1 β ActiveSpecification Comparison
| Parameter | ISZ15EP15LMATMA1 | IQE036N08NM6CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.28 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | β |
| Polarity | P-Channel | β |
| Drain-Source Voltage (VDS) max | -150 V | β |
| Drain-Source On-Resistance (RDS(on)) max | 1500 mOhm @ VGS = -10 V | β |
| Continuous Drain Current (ID) at TA=25C | 820 mA | β |
| Continuous Drain Current (ID) at TC=25C | 2.7 A | β |
| Power Dissipation (PD) at TA=25C | 2.5 W | β |
| Power Dissipation (PD) at TC=25C | 26.3 W | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | β |
| Gate Charge (Qg) | [DATA_NEEDED: Qg total] | β |
| Technology | OptiMOS trench-gate | Trench MOSFET, OptiMOS 6 |
| Package | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) with exposed pad | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C (junction) | -55 C to +175 C (junction, Tj) |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | MSL1 (per JEDEC J-STD-020) |
| Packaging | Tape and Reel (T&R) | β |
| Product Family | β | OptiMOS 6 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | β | 80 V |
| Gate-Source Voltage (Vgs) | β | [DATA_NEEDED: Vgs max] |
| Continuous Drain Current (Id) at Tc | β | 118 A |
| Continuous Drain Current (Id) at Ta | β | 16.7 A |
| Rds(on) max at Vgs=10V | β | 3.6 mOhm |
| Gate Threshold Voltage (Vgs(th)) | β | 3.5 V (max) |
| Power Dissipation at Tc | β | 125 W |
| Power Dissipation at Ta | β | 2.5 W |
| Configuration | β | Single N-channel, Source-Down |