ISZ15EP15LMATMA1 vs IQE036N08NM6CGATMA1 Сравнение
Подробное сравнение бок о бок ISZ15EP15LMATMA1 от Infineon и IQE036N08NM6CGATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | ISZ15EP15LMATMA1 | IQE036N08NM6CGATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,28 | $0,82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | — |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) max | -150 V | — |
| Drain-Source On-Resistance (RDS(on)) max | 1500 mOhm @ VGS = -10 V | — |
| Continuous Drain Current (ID) at TA=25C | 820 mA | — |
| Continuous Drain Current (ID) at TC=25C | 2.7 A | — |
| Power Dissipation (PD) at TA=25C | 2.5 W | — |
| Power Dissipation (PD) at TC=25C | 26.3 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Technology | OptiMOS trench-gate | Trench MOSFET, OptiMOS 6 |
| Корпус | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) with exposed pad | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) |
| Тип монтажа | Surface Mount | Surface Mount |
| Диапазон рабочих температур | -55C to +150C (junction) | -55 C to +175 C (junction, Tj) |
| Статус RoHS | Compliant | Compliant |
| Уровень MSL | 1 | MSL1 (per JEDEC J-STD-020) |
| Packaging | Tape and Reel (T&R) | — |
| Product Family | — | OptiMOS 6 |
| Тип транзистора | — | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | — | 80 V |
| Gate-Source Voltage (Vgs) | — | [DATA_NEEDED: Vgs max] |
| Continuous Drain Current (Id) at Tc | — | 118 A |
| Continuous Drain Current (Id) at Ta | — | 16.7 A |
| Rds(on) max at Vgs=10V | — | 3.6 mOhm |
| Gate Threshold Voltage (Vgs(th)) | — | 3.5 V (max) |
| Power Dissipation at Tc | — | 125 W |
| Power Dissipation at Ta | — | 2.5 W |
| Configuration | — | Single N-channel, Source-Down |