ISZ173N15NM6ATMA1 vs BSC076N04NDATMA1 Comparison
Detailed side-by-side comparison of ISZ173N15NM6ATMA1 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC076N04NDATMA1
BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon
BSC076N04NDATMA1 β ActiveSpecification Comparison
| Parameter | ISZ173N15NM6ATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.18 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 150V | OptiMOS 3 |
| FET Type | N-Channel | 2x N-Channel MOSFET array |
| Drain-Source Voltage (VDS) | 150 V | β |
| Continuous Drain Current (ID) at Ta | 7.9 A | β |
| Continuous Drain Current (ID) at Tc | 48 A | β |
| Power Dissipation (PD) at Ta | 2.5 W | β |
| Power Dissipation (PD) at Tc | 94 W | β |
| Technology | OptiMOS 6 trench-gate MOSFET | Trench MOSFET (OptiMOS 3) |
| Package | PG-TSDSON-8 FL | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Mode | Enhancement Mode | β |
| Application | Hard and soft switching, high/low frequency | β |
| Lead-Free | Yes | β |
| RoHS Status | Compliant | β |
| Tape & Reel Quantity | 5000 | β |
| Configuration | β | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | β | 40 V |
| Continuous Drain Current (ID) | β | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | β | 4 V (max, typical) |
| On-Resistance RDS(on) max | β | 7.6 mOhm |
| Power Dissipation (Ta) | β | 2.3 W |
| Power Dissipation (Tc) | β | 65 W |
| Qgd/Qgs Ratio | β | < 0.8 (high shot-through immunity) |
| Operating Junction Temperature | β | -55 C to +175 C |
| Package / Case | β | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | β | Compliant (Pb-free plating) |