ISZ173N15NM6ATMA1 vs BSC076N04NDATMA1 比較
詳細並排比較 ISZ173N15NM6ATMA1 由 Infineon 與 BSC076N04NDATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | ISZ173N15NM6ATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 150V | OptiMOS 3 |
| FET Type | N-Channel | 2x N-Channel MOSFET array |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at Ta | 7.9 A | — |
| Continuous Drain Current (ID) at Tc | 48 A | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Power Dissipation (PD) at Tc | 94 W | — |
| Technology | OptiMOS 6 trench-gate MOSFET | Trench MOSFET (OptiMOS 3) |
| 封裝 | PG-TSDSON-8 FL | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Operating Mode | Enhancement Mode | — |
| Application | Hard and soft switching, high/low frequency | — |
| Lead-Free | Yes | — |
| RoHS 狀態 | Compliant | — |
| Tape & Reel Quantity | 5000 | — |
| Configuration | — | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | — | 40 V |
| Continuous Drain Current (ID) | — | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | — | 4 V (max, typical) |
| On-Resistance RDS(on) max | — | 7.6 mOhm |
| Power Dissipation (Ta) | — | 2.3 W |
| Power Dissipation (Tc) | — | 65 W |
| Qgd/Qgs Ratio | — | < 0.8 (high shot-through immunity) |
| 工作接面溫度 | — | -55 C to +175 C |
| 封裝 / 外殼 | — | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | — | Compliant (Pb-free plating) |