ISZ173N15NM6ATMA1 - 150V OptiMOS 6 N-MOSFET 48A | Infineon
MPN: ISZ173N15NM6ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.66 | $16.60 |
| 100 | $1.48 | $148.00 |
| 500 | $1.32 | $660.00 |
| 1,000 | $1.18 | $1,180.00 |
ISZ173N15NM6ATMA1 Overview
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that enables efficient power conversion in switched-mode power supplies, motor drives, and DC-DC converters. The MOSFET category sits within the broader hierarchy of discrete power semiconductors, alongside IGBTs, BJTs, and thyristors, serving as the workhorse for low-to-medium voltage (<300V) switching applications where fast switching, low conduction loss, and high efficiency are critical.
Key features of the ISZ173N15NM6ATMA1 include ultra-low RDS(on) values optimized for high-current applications, integrated gate protection, and excellent thermal performance in a small footprint. The PG-TSDSON-8 FL package features a low-profile design with an exposed drain pad that significantly reduces thermal resistance, enabling high power dissipation in space-constrained PCB layouts.
The OptiMOS 6 technology platform represents Infineon's sixth-generation power MOSFET architecture, using advanced trench-gate structures to minimize both switching and conduction losses. This technology is specifically engineered for high-frequency, hard-switching applications like telecom DC-DC converters, server power supplies, and solar microinverters, where reduced switching losses directly translate to higher system efficiency and reduced cooling requirements.
Typical applications include 48V telecom bus converters, synchronous rectification in switched-mode power supplies (SMPS), motor drive circuits in 48V-72V battery systems, solar power optimizers, and Class-D audio amplifiers. The 150V voltage rating provides ample margin for 48V, 60V, and 96V bus systems with inductive switching transients.
When designing with this MOSFET, ensure gate-drive voltage compliance with the VGS(th) specification. The PG-TSDSON-8 FL package requires careful PCB thermal design - at least 6 cm² of copper area on a 40mm x 40mm x 1.5mm FR4 PCB is required to achieve rated performance. Proper gate-driver selection minimizes switching losses and EMI.
Drop-in alternatives for ISZ173N15NM6ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with ISZ173N15NM6ATMA1 (same form factor and footprint) — differing in Package, Technology, Operating Temperature Range, MSL Level, Drain-Source Voltage (VDS).
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View Datasheet →ISZ173N15NM6ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 6 150V |
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 150 V |
| Continuous Drain Current (ID) at Ta | 7.9 A |
| Continuous Drain Current (ID) at Tc | 48 A |
| Power Dissipation (PD) at Ta | 2.5 W |
| Power Dissipation (PD) at Tc | 94 W |
| Technology | OptiMOS 6 trench-gate MOSFET |
| Package | PG-TSDSON-8 FL |
| Mounting Type | Surface Mount |
| Operating Mode | Enhancement Mode |
| Application | Hard and soft switching, high/low frequency |
| Lead-Free | Yes |
| RoHS Status | Compliant |
| Tape & Reel Quantity | 5000 |
ISZ173N15NM6ATMA1 Pin Configuration
| Pin 1 | Source — Source terminal (low-side) |
| Pin 2 | Source — Source terminal |
| Pin 3 | Source — Source terminal |
| Pin 4 | Gate — Gate control input |
| Pin 5 | Drain — Drain terminal (via exposed pad) |
| Pin 6 | Source — Source terminal |
| Pin 7 | Source — Source terminal |
| Pin 8 | Source — Source terminal |
Safe Operating Area
Typical Applications
ISZ173N15NM6ATMA1 is suitable for 6 applications: 48V Telecom DC-DC Converters, Synchronous Rectification in SMPS, Motor Drive for 48V-72V Battery Systems, Solar Microinverters and Power Optimizers, Class-D Audio Amplifiers, Industrial 48V-96V Bus Switching.
48V Telecom DC-DC Converters
The ISZ173N15NM6ATMA1 is ideally suited for 48V telecom bus DC-DC converter applications. Its 150V VDS rating provides substantial margin above the 48V nominal bus voltage, accommodating inductive switching transients commonly observed in buck and boost converter topologies. OptiMOS 6 technology delivers a low Figure of Merit (RDS(on) x Qg), enabling high-frequency switching above 200kHz which reduces magnetic component size and total solution footprint. The 48A Tc current rating supports point-of-load converter stages up to 1500W. Per the Infineon datasheet, the PG-TSDSON-8 FL package is optimized for minimal thermal resistance when mounted on standard 4-layer telecom PCBs with appropriate copper thermal vias.
Recommended
Synchronous Rectification in SMPS
In switched-mode power supplies (SMPS), the ISZ173N15NM6ATMA1 serves as the synchronous rectifier MOSFET on the secondary side, replacing lossy Schottky diodes. OptiMOS 6 150V technology minimizes both conduction losses (low RDS(on)) and switching losses (low Qg and Qrr), enabling >95% efficiency in hard-switching full-bridge and forward converter topologies. The 150V VDS rating supports 48V-96V output rails with substantial voltage headroom. Compared to older planar MOSFETs, this part reduces rectifier losses by approximately 30%, directly improving overall system efficiency and reducing heatsink requirements in server and telecom power supplies.
Recommended
Motor Drive for 48V-72V Battery Systems
The ISZ173N15NM6ATMA1 provides reliable switching in 48V-72V battery motor drive applications, including e-bikes, light EVs, industrial automation, and robotic drives. The 150V VDS rating handles back-EMF transients from inductive motor loads, while the 48A Tc rating supports motors up to approximately 2kW. OptiMOS 6 technology enables efficient PWM operation at 20kHz-100kHz switching frequencies, providing smooth torque control. The PG-TSDSON-8 FL package fits within compact motor control PCB assemblies. Used as low-side switch in three-phase bridge inverters with companion gate drivers.
Recommended
Solar Microinverters and Power Optimizers
In solar microinverter and DC power optimizer applications, the ISZ173N15NM6ATMA1 serves as the high-side and low-side switch in the DC-DC stage that converts panel output (typically 20V-60V) to a higher DC link voltage. OptiMOS 6 150V rating supports 60V-96V DC link architectures with margin for grid-tie inverter transients. Low RDS(on) minimizes conduction loss, maximizing energy harvest efficiency from each solar panel. The compact PG-TSDSON-8 FL package enables high power density designs required for module-level power electronics.
Recommended
Class-D Audio Amplifiers
The ISZ173N15NM6ATMA1 functions as the output stage switch in Class-D audio amplifiers for professional and high-end consumer audio. OptiMOS 6 technology's low Qg and Qrr enable clean switching transitions that reduce total harmonic distortion (THD) in the audio band. The 150V VDS rating supports amplifier rails up to ±75V, covering high-power professional audio and subwoofer amplifier designs. With 48A Tc current capability, this MOSFET can deliver several hundred watts per channel in half-bridge configurations. The PG-TSDSON-8 FL package supports tight PCB layouts for minimized loop inductance.
Recommended
Industrial 48V-96V Bus Switching
For industrial automation systems operating on 48V-96V DC bus architectures, the ISZ173N15NM6ATMA1 serves as the main switching element in solid-state relays, bus converters, and hot-swap controllers. The 150V VDS rating handles the 96V industrial bus with comfortable margin for transient overvoltages. OptiMOS 6 technology provides reliable switching at industrial-grade ambient temperatures up to 85C. The PG-TSDSON-8 FL package withstands the thermal cycling typical of industrial environments. Used in PLC power distribution, industrial robot controllers, and factory automation power systems.
Recommended
Recommended Products Summary
Engineering reference data for ISZ173N15NM6ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | ISZ072N06NM6ATMA1 | IPC100N04S5L1R5ATMA1 | ISC011N04NM7VATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TSDSON-8 FL | PG-TSDSON-8 FL - same | PG-TSDSON-8 FL - same | PG-TSDSON-8 FL - same | PG-TSDSON-8 FL - same |
| Drain-Source Voltage (VDS) | 150 V | 60 V | 40 V | 40 V | 80 V |
| Technology | OptiMOS 6 150V | OptiMOS 6 60V | OptiMOS 5 40V | OptiMOS 7 40V | OptiMOS 6 80V |
| Voltage Class | 150V (high-voltage) | 60V (low-voltage) | 40V (low-voltage) | 40V (low-voltage) | 80V (mid-voltage) |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Key Differentiators
- Higher voltage rating (150V vs 60V) enables 48V-96V bus applications (vs ISZ072N06NM6ATMA1)
- OptiMOS 6 generation delivers lower Figure of Merit than older OptiMOS 5 (vs IPC100N04S5L1R5ATMA1)
- 150V voltage class expands application range vs 80V OptiMOS 6 parts (vs ISC151N08NM6ATMA1)
Design Notes
The PG-TSDSON-8 FL package requires at least 6 cm² of copper area on a 40mm x 40mm x 1.5mm FR4 PCB (per Infineon datasheet) to achieve the 94W Tc power dissipation rating. Use thermal vias under the exposed pad to inner copper layers. For continuous high-current operation (>20A), consider forced-air cooling or an additional heatsink attached to the drain pad. Junction-to-ambient thermal resistance depends strongly on PCB layout - poor layouts can derate the 48A Tc rating by 50% or more.
Minimize the high-side gate-drive loop inductance by placing the gate driver IC as close as possible to the MOSFET gate pin. Use wide, short trace from gate driver output to gate pin (target <5nH loop inductance). Add a 10Ω gate resistor in series with the gate to dampen ringing and reduce EMI. Keep the power loop (drain-source-switching node) area as small as possible to minimize voltage overshoot during switching transitions. Place a small RC snubber across drain-source if ringing exceeds 20% of VDS.
Do not exceed 150V VDS - even brief transients above this can permanently damage the MOSFET. Add a TVS diode or snubber across drain-source if the application generates inductive kickback. Verify gate-drive voltage matches VGS rating (typically ±20V max, with VGS(th) of 2-4V). Avoid linear operation - this MOSFET is optimized for switching applications; using it as a linear pass element causes excessive heating. Do not parallel multiple units without proper gate-balance resistors and matched gate-drive timing.
The PG-TSDSON-8 FL package has a small pitch requiring careful PCB layout. Use non-solder-mask-defined (NSMD) pads for better solder joint reliability. Stencil aperture should be 1:1 to pad size with appropriate thickness (0.1mm-0.15mm) for the small package. Per IPC-7351 guidelines, follow the land pattern exactly as specified in the Infineon application note for this package. Reflow profile should follow JEDEC J-STD-020 with peak temperature not exceeding 260°C.
Compliance Information
RoHS compliant and lead-free per Infineon product information. AEC-Q100 qualification not specified - contact Infineon for automotive-grade variants in the OptiMOS family. REACH compliance standard for EU distribution.
