K4A4G045WD-BCPB vs K4A4G085WD-BCRC Comparison
Detailed side-by-side comparison of K4A4G045WD-BCPB by Samsung Electronics and K4A4G085WD-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A4G045WD-BCPB | K4A4G085WD-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.20 | $3.58 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM (D-die) |
| Density | 4 Gb | — |
| Organization | 1G x 4 | 512M x 8 |
| Speed Class | DDR4-2133 (PC2133) | — |
| Supply Voltage | 1.2 V | 1.2 V |
| Interface | DDR4 parallel, double data rate | Parallel |
| Die Generation | D-die | — |
| Package | 78-ball TFBGA (FBGA) | FBGA-78 (TFBGA) |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Terminals | 78 | 78 |
| Terminal Form | Ball (BGA) | — |
| Package Shape | Rectangular | — |
| Burst Length | 8 (per Samsung DDR4 SDRAM datasheet Rev. 1.1) | — |
| Speed Bin Notation | CL-tRCD-tRP order (per Samsung ordering information) | — |
| Datasheet Pages | 66 pages (K4A4G045WD / K4A4G085WD family) | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | — |
| Refresh Rate | [DATA_NEEDED: refresh interval 1x/2x/4x support] | — |
| Memory Density | — | 4 Gbit |
| Data Rate | — | 2400 Mb/s (PC2400) |
| Access Mode | — | Multi-bank page burst |
| CAS Latency | — | [DATA_NEEDED: CAS Latency] |
| Operating Temperature Range | — | [DATA_NEEDED: Operating Temperature Range] |
| Refresh | — | [DATA_NEEDED: Refresh specification] |
| RoHS Status | — | [DATA_NEEDED: RoHS Status] |
| MSL Level | — | [DATA_NEEDED: MSL Level] |