Samsung Electronics

K4A4G085WD-BCRC - 4Gb DDR4-2400 SDRAM 512Mx8 | Samsung

MPN: K4A4G085WD-BCRC ✓ Active
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1.2 V Vdss FBGA-78 (TFBGA) Package 4 Gbit Memory
From $3.58 USD / Unit
MOQ: 1 |
Price updated: 2026-09-03
Volume Pricing
Qty Unit Price Extended
1 $4.26 $4.26
10 $4.1 $41.00
100 $3.92 $392.00
500 $3.75 $1,875.00
1,000 $3.58 $3,580.00
ℹ️ All prices are in USD

Drop-in alternatives for K4A4G085WD-BCRC — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

K4A4G085WD-BCPB

✅ Drop-In
📦 FBGA-78 (TFBGA)
same 4Gb D-die die and 78-ball FBGA footprint; PB designation = lead-free ball/plating variant, same DDR4-2400 class

📋 Reference alternative (not in catalog)

K4A4G085WE-BCRC

✅ Drop-In
Samsung Electronics
📦 FBGA-78 (TFBGA)
DDR4 SDRAM · 4 Gbit · 512M x 8 · 2400 Mbps · 0.833 ns · 1.2 V · 1.2 V · 2.5 V

✓ In Stock

$1.36 / Unit

View Datasheet →

K4A4G045WD-BCRC

✅ Drop-In
Samsung Electronics
📦 FBGA-78 (TFBGA)
DDR4 SDRAM · 4 Gb · 1G x4 · D-die · 1.2 V · BCRC (2400 Mbps per Samsung product selection guide) · TFBGA-78 (FBGA-78) · 78

✓ In Stock

$3.45 / Unit

View Datasheet →

K4A4G045WD-BCPB

✅ Drop-In
Samsung Electronics
📦 FBGA-78 (TFBGA)
DDR4 SDRAM · 4 Gb · 1G x 4 · DDR4-2133 (PC2133) · 1.2 V · DDR4 parallel, double data rate · D-die · 78-ball TFBGA (FBGA)

✓ In Stock

$2.2 / Unit

View Datasheet →

MT40A512M8RH-075E:B

✅ Drop-In
Micron Technology
📦 FBGA-78 (TFBGA)
DDR4 SDRAM · 4 Gbit · 512M x 8 · 2666 MT/s (DDR4-2666) · 1333 MHz (1.33 GHz) · 1.2 V +/-60 mV · 1.2 V +/-60 mV · 2.5 V, -125 mV/+250 mV

✓ In Stock

$2.15 / Unit

View Datasheet →

K4A4G085WD-BCRC Maximum Ratings & Electrical Characteristics

Memory Density 4 Gbit
Organization 512M x 8
Memory Type DDR4 SDRAM (D-die)
Data Rate 2400 Mb/s (PC2400)
Supply Voltage 1.2 V
Package FBGA-78 (TFBGA)
Number of Terminals 78
Interface Parallel
Access Mode Multi-bank page burst
Mounting Type Surface Mount

K4A4G085WD-BCRC fbga-78 (tfbga) Pin Configuration Guide

Complete pinout information for K4A4G085WD-BCRC (fbga-78 (tfbga) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.

fbga-78 (tfbga) package pinout diagram for K4A4G085WD-BCRC

No detailed pinout data available for K4A4G085WD-BCRC.

Refer to the datasheet for full pin configuration.

Safe Operating Area (SOA) & Thermal Characteristics

Safe Operating Area Chart Default safe operating area chart for K4A4G085WD-BCRC Drain-to-Source Voltage (Vds) Drain Current (Id)

No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

K4A4G085WD-BCRC is suitable for 6 applications: Industrial Controllers, Embedded Computing Modules, FPGA-Based Data Acquisition, Firmware Boot and Logging, Networking Equipment, DDR3-to-DDR4 Migration Replacements.

🏭

Industrial Controllers

Industrial PLCs and motion controllers rely on DRAM for run-time data, recipe storage buffering, and firmware execution. The K4A4G085WD-BCRC fits this role with 4Gb of DDR4 at 2400 Mb/s, providing up to 2.4 GB/s of peak bandwidth per device on a x8 bus, which is ample for deterministic control loops and HMI buffering. Its 1.2V supply keeps system power low, important in sealed fanless enclosures, and the 78-ball FBGA package (approximately 7.5 x 9.5 mm class footprint) mounts on compact industrial PCBs. Designers typically pair it with an embedded processor or FPGA hard DDR4 controller and validate across the industrial temperature range before release.

🖥️

Embedded Computing Modules

COMs and SoMs based on ARM or x86 SoCs use x8 DDR4 devices to populate 64-bit memory buses. Eight K4A4G085WD-BCRC devices yield 4GB on a 64-bit bus at DDR4-2400, matching the memory requirements of Linux-based gateways and edge computing nodes. The device's 1.2V JEDEC DDR4 interface interoperates with standard memory controllers from all major silicon vendors, and the fly-by address/command routing used in DDR4 keeps PCB layer count manageable. Memory sizing at 4Gb per device balances density against cost, making it a common BOM line for volume module production and second-source qualification alongside Micron equivalents.

🔧

FPGA-Based Data Acquisition

High-speed data acquisition systems use FPGA memory controllers (Xilinx MIG, Intel EMIF) to buffer ADC streams into DDR4. The K4A4G085WD-BCRC offers 4Gb of buffering per chip; with 2400 Mb/s transfer rates and multi-bank page burst access, a x8 device sustains the sustained-write bandwidth needed for streaming applications. Its 1.2V interface reduces I/O power compared to DDR3, which matters in dense acquisition cards with dozens of memory chips. Designers should budget controller calibration (write leveling, read training) time at startup and route DQS/DQ as length-matched pairs with on-die termination (ODT) tuning to meet signal integrity targets at speed.

💾

Firmware Boot and Logging

Embedded systems execute firmware from DRAM after boot code loads from flash, and log operational data to memory before committing to storage. The K4A4G085WD-BCRC provides 4Gb of fast execution memory with DDR4-2400 bandwidth, accelerating boot decompression and application runtime versus DDR3 or lower-density solutions. Distributor listings (globalspec) explicitly cite firmware boot and embedded logging among its target uses. Its x8 data mask support enables efficient partial writes for logging workloads. Pair with a supervisor device to guarantee clean power sequencing so that DDR4 initialization and memory training complete reliably at every power cycle.

🌐

Networking Equipment

Routers, switches, and network appliances use DDR4 for packet buffers, routing tables, and control-plane software. The K4A4G085WD-BCRC delivers 4Gb per device with DDR4-2400 bandwidth, and its x8 organization allows flexible bus width scaling - from single-chip 8-bit designs in edge devices to 64-bit ranks in aggregation equipment. The 1.2V operation reduces total platform power, a key metric in always-on networking hardware where every watt affects thermal design and operating cost. The 78-ball FBGA package supports the dense memory arrangements typical of switch line cards, and second sourcing with Micron equivalents protects supply continuity for long-life network products.

DDR3-to-DDR4 Migration Replacements

Designs migrating from DDR3 platforms such as MT47H32M16NF-25E-based systems to DDR4 can adopt the K4A4G085WD-BCRC to gain double the density per die shrink and roughly 30-40% lower I/O power at 1.2V versus DDR3L. Distributor cross-reference data (IC-Components) positions this Samsung D-die part as a replacement-sourcing candidate alongside Micron and SK Hynix equivalents. Migration requires a DDR4-capable controller, revised power tree (1.2V rails and VTT), and PCB respin for the FBGA footprint, but the payoff is higher bandwidth (2400 Mb/s class), lower standby power, and an active, multi-sourced supply base for long production lifetimes.

What are the key specifications of K4A4G085WD-BCRC that engineers should know?
The Samsung K4A4G085WD-BCRC is a 4Gb DDR4 SDRAM organized as 512M x 8 with a 2400 Mb/s data rate (PC2400), a 1.2V supply, and a 78-ball FBGA package. Per the Samsung K4A4G085WD datasheet (4Gb D-die DDR4 SDRAM, 66 pages), it uses a multi-bank page burst access architecture and is a drop-in option within Samsung's D-die DDR4 family for industrial and embedded memory subsystems.
What is the price of K4A4G085WD-BCRC?
Distributor pricing for K4A4G085WD-BCRC starts from approximately $4.26 per unit as of 2026-09-04, per the Weyland listing. Quantity breaks typically reduce unit cost, and XAIPART lists tiers at 1, 10, 100, 500, and 1000 pieces. Because DDR4 commodity DRAM prices fluctuate with the memory market, request a current quote for large-volume procurement.
Where to buy K4A4G085WD-BCRC online?
K4A4G085WD-BCRC is available from XAIPART as well as distributors listed on DigiPart, Octopart, Jotrin Electronics, Censtry, and YIC Electronics, with stock reported by several brokers as of 2026-09-04. Samsung-branded DDR4 of this grade is also carried by franchise distributors. Always buy from authorized or quality-assured channels; brokered DRAM carries higher counterfeit risk, so request date codes and test reports where possible.
Is K4A4G085WD-BCRC in stock and what is the lead time?
Stock availability for K4A4G085WD-BCRC varies by distributor: Censtry and Weyland report new and original parts in stock as of 2026-09-04. Lead time for in-stock material is typically days to a few weeks; if a distributor needs to source from allocation, lead times can extend to 8-16 weeks for commodity DDR4. Check the XAIPART product page for real-time availability before committing to a production schedule.
What is the difference between K4A4G085WD-BCRC and K4A4G085WE-BCRC?
The K4A4G085WD-BCRC uses Samsung's D-die, while the K4A4G085WE-BCRC uses the newer E-die; both are 4Gb, 512M x 8, DDR4-2400-class parts in the same 78-ball FBGA package. DigiKey lists the WE-BCRC as an active Memory IC 4Gbit parallel part. Because they are JEDEC-standard DDR4 components in the same footprint, the E-die version is generally usable as a replacement after confirming the memory controller supports it.
K4A4G085WD-BCRC vs Micron MT40A512M8RH-075E:B - which is better for industrial controllers?
Both parts are 4Gb DDR4 SDRAM in 512M x 8 organization at 1.2V, so either satisfies a typical industrial controller memory requirement. The Samsung part runs at the DDR4-2400 (PC2400) class, while the Micron MT40A512M8RH-075E:B is specified in the -075 speed bin. Selection should be driven by the memory controller's qualified vendor list, dual-sourcing strategy, and price - both brands are proven in industrial designs, so dual-source qualification of both is common practice.
Can K4A4G045WD-BCRC replace K4A4G085WD-BCRC?
Not pin-for-pin as a memory-equivalent: the K4A4G045WD-BCRC is a 2Gb DDR4 in 256M x 8 organization, half the density and capacity of the 4Gb K4A4G085WD-BCRC. It shares the 78-ball FBGA footprint family, so the device physically fits the same land pattern in many designs, but firmware, memory maps, and controller configuration must be updated for halved capacity. Use it only when your application tolerates 2Gb.
What is the best drop-in replacement for K4A4G085WD-BCRC?
The best drop-in replacement is Samsung's own K4A4G085WD-BCPB, which is the same 4Gb D-die die in the same 78-ball FBGA package with a lead-free (PB-free) ball/plating designation. The K4A4G085WE-BCRC (E-die) is the next closest, also pin-compatible. According to the Samsung K4A4G085WD datasheet, all variants in this family share the same ballout, making PCB footprint reuse straightforward.
What is the best Micron equivalent for K4A4G085WD-BCRC?
The closest Micron equivalent is the MT40A512M8RH-075E:B, a 4Gb DDR4 SDRAM with identical 512M x 8 organization and a standard DDR4 ballout in a compatible BGA package. Because DDR4 SDRAM follows the JEDEC standard, the electrical interface and ball map are interoperable; however, you must confirm the package ball count and layout in the Micron datasheet against your PCB footprint, and verify controller training settings, before second-sourcing.
Where to download the K4A4G085WD datasheet PDF?
The K4A4G085WD 4Gb D-die DDR4 SDRAM datasheet PDF (66 pages) is downloadable from Samsung Semiconductor via datasheet aggregators such as alldatasheet.com and datasheet4u.com, which host the official Samsung document. The K4A4G085WD-BCRC is a speed/package ordering variant covered by this same datasheet family; also check samsung.com/semiconductor for the latest revision to confirm AC timing for the DDR4-2400 speed grade.
Where can I find the K4A4G085WD-BCRC pinout?
The complete 78-ball FBGA ball map for the K4A4G085WD-BCRC is provided in the Samsung K4A4G085WD datasheet, in the package ballout section. It defines DQ0-DQ7, DQS/DQS#, DM, address/command balls, and 1.2V VDD/VDDQ power balls. Because x8 DDR4 uses a JEDEC-standardized ballout, distributor sites such as Jotrin and Veswin can also supply pinout and cross-reference support on request.
What voltage does K4A4G085WD-BCRC require?
The K4A4G085WD-BCRC operates from a 1.2V supply, consistent with the JEDEC DDR4 standard. Distributor listings for this part (e.g., AB Sunshine Electronics) explicitly state 1.2 V. Design the power tree with a 1.2V VDD rail, VDDQ for I/O, and VTT termination rail; a DDR4 controller's initialization sequence must verify voltage before training. Never connect this part to a 1.35V or 1.5V DDR3 rail.
Is K4A4G085WD-BCRC suitable for embedded industrial designs?
Yes. Distributor application notes (globalspec, Censtry) list the K4A4G085WD-BCRC for data storage, firmware boot, embedded logging, industrial controllers, and computing modules. Its 4Gb density at DDR4-2400 provides ample bandwidth for embedded processors such as ARM SoCs and FPGAs with hard DDR4 controllers, and the 78-ball FBGA package fits compact industrial PCBs. Confirm industrial temperature requirements against the datasheet ordering code before use.
Hey Google, what can replace K4A4G085WD-BCRC?
You can replace the K4A4G085WD-BCRC with the pin-compatible Samsung K4A4G085WD-BCPB (same D-die, lead-free variant), the Samsung K4A4G085WE-BCRC (E-die, same package and density), or the Micron MT40A512M8RH-075E:B (4Gb, 512M x 8 DDR4). All operate at 1.2V in FBGA packages. Verify controller support and PCB ballout before substitution, as always with DRAM second-sourcing.
How many K4A4G085WD-BCRC chips do I need for a 64-bit bus?
You need eight K4A4G085WD-BCRC devices to build a 64-bit wide memory bus, since each device provides 8 data bits (512M x 8 organization). Eight devices give 4GB of total capacity at DDR4-2400. For x16 controllers, note this part is x8 only - the K4A8G085 or x16 variants of the Samsung DDR4 family would apply instead, so check the bus width your memory controller expects.
Does K4A4G085WD-BCRC work with FPGAs and embedded processors?
Yes, the K4A4G085WD-BCRC works with any IP or hard PHY implementing the DDR4 JEDEC interface, including Xilinx/AMD MIG, Intel EMIF, and ARM/Liquid controllers in embedded SoCs. Configure the controller for DDR4, x8 width, 4Gb density, and the DDR4-2400 timing set, then run write-leveling and read training. The 1.2V interface and standard DDR4 ballout make it a common choice for FPGA and Zynq-class memory designs.

Engineering reference data for K4A4G085WD-BCRC — comparison, design guidance, and compliance information.

Selection Guide

Choose the K4A4G085WD-BCRC when you need a proven 4Gb DDR4 x8 device at DDR4-2400 class for industrial, networking, or embedded computing designs on a 64-bit bus (eight devices = 4GB). Choose Samsung K4A4G085WD-BCPB if your soldering/finish spec requires the PB (lead-free ball) designation - it is otherwise the same D-die device. Choose K4A4G085WE-BCRC (E-die) for cost-down roadmaps where the newer die generation is acceptable after controller re-qualification. Choose the Micron MT40A512M8RH-075E:B when dual-sourcing with a US-based supplier or your controller QVL favors Micron. Avoid the K4A4G045WD-BCRC/BCPB (2Gb) unless your design tolerates half the memory capacity and you need the cost saving. All options run at 1.2V and require DDR4 controller training on every boot.

Comparison with Alternatives

Parameter This Product K4A4G085WD-BCPB K4A4G085WE-BCRC MT40A512M8RH-075E:B
Brand Samsung Electronics Samsung Electronics Samsung Electronics Micron Technology
Package FBGA-78 (TFBGA) FBGA-78 (TFBGA) - same FBGA-78 (TFBGA) - same FBGA (DDR4 standard ballout)
Density 4 Gbit 4 Gbit 4 Gbit 4 Gbit
Organization 512M x 8 512M x 8 512M x 8 512M x 8
Data Rate 2400 Mb/s (PC2400) [DATA_NEEDED] DDR4-2400 class -075 speed bin (DDR4-2400 class)
Supply Voltage 1.2 V 1.2 V 1.2 V 1.2 V
Die Generation D-die D-die E-die (newer) Micron E-die class
Unit Price (qty 1) $4.26 (as of 2026-09-04) [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED]
RoHS [DATA_NEEDED] Lead-free (PB designation) [DATA_NEEDED] [DATA_NEEDED]

Key Differentiators

  • Samsung D-die 4Gb density with established production history (vs K4A4G085WE-BCRC)
  • Multi-vendor drop-in second sourcing at identical 512M x 8 organization (vs MT40A512M8RH-075E:B)
  • Full 4Gb capacity vs family 2Gb variants in same footprint (vs K4A4G045WD-BCRC)

Design Notes

Supply the K4A4G085WD-BCRC from a clean 1.2V rail per the JEDEC DDR4 standard. Use separate decoupling for VDD (core) and VDDQ (I/O): a bulk 47-100 uF capacitor per device group plus 0.1 uF ceramics at each supply ball. Generate the VTT termination rail (0.6V) with a dedicated sink-source LDO or DDR termination regulator sized for the fly-by bus load. Estimated: at DDR4-2400 with ODT enabled, per-device VDDQ current is typically in the tens-to-low-hundreds of mA range depending on bus utilization - verify against the datasheet IDD specifications for your actual speed bin and use pattern.

DDR4 uses fly-by routing for address/command/clock with on-die termination, while DQ/DQS pairs require strict length matching within each byte lane (typically +/-5 mil intra-pair). Keep the 78-ball FBGA fanout to a dedicated inner layer pair with a solid reference plane; avoid splitting the reference under DQS strobes. Match trace lengths among the eight devices of a 64-bit rank and place the first device closest to the controller. These constraints are standard JEDEC DDR4 layout practice and should be validated with SI simulation at 2400 Mb/s.

The most common failure mode when second-sourcing DDR4 is skipping controller re-training: even pin-compatible parts from different die generations (D-die vs E-die, or Micron vs Samsung) can require different write-leveling and read-eye training results. Ensure your bootloader runs full DDR4 training every power-up rather than using hardcoded training values. Also confirm the ordering code suffix: -BCRC vs -BCPB differ in ball/plating finish (RC vs PB designation), which can matter for soldering profiles and moisture sensitivity handling per the package MSL rating.

Compliance Information

RoHS
Unknown
REACH
Unknown
AEC-Q100
Not Applicable
Lead Free
Unknown
Halogen Free
Unknown
Conflict Minerals
Unknown

Compliance status not explicitly stated in the provided web data. The PB-suffix Samsung variants are lead-free ball/plating designations; verify RoHS/REACH declarations via the Samsung Semiconductor product page.

Data verified on: 2026-09-04 — data verified and curated by XAIPART's component engineering team

Related Searches

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Related Components & Terms

Samsung Electronics Samsung Semiconductor K4A4G085WD-BCRC K4A4G085WD K4A4G085WE-BCRC MT40A512M8RH-075E:B Micron Technology DDR4 SDRAM DRAM DDR (Double Data Rate) JEDEC FBGA-78 TFBGA 4Gb D-die PC2400 2400 Mb/s data rate 1.2V supply multi-bank page burst access Memory IC industrial controllers embedded computing modules RoHS on-die termination (ODT)
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