K4A4G165WD-BCPB vs K4A4G165WD-BCTD Comparison
Detailed side-by-side comparison of K4A4G165WD-BCPB by Samsung Electronics and K4A4G165WD-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A4G165WD-BCTD - 4Gb DDR4 SDRAM x16 2666Mbps | Samsung
K4A4G165WD-BCTD ✓ ActiveSpecification Comparison
| Parameter | K4A4G165WD-BCPB | K4A4G165WD-BCTD |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.10 | $19.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 |
| Data Rate | 2133 MT/s | 2666 Mbps/pin (-BCTD speed grade) |
| Core Voltage | 1.2 V | — |
| Package | FBGA-96 | 96-ball FBGA |
| Mounting Type | Surface Mount | Surface Mount (BGA) |
| Die Generation | D-die | — |
| Bank Architecture | 4 bank groups x 4 banks | 16 banks / 4 bank groups |
| CAS Latency | [DATA_NEEDED: CAS Latency at 2133 speed bin] | — |
| Burst Length | 8 (BL8, fixed/chop) | — |
| Interface | DDR4 (synchronous, source-synchronous strobe) | SSTL-12 |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | 0C to +85C (commercial) |
| Pb-Free | Yes (per Samsung part-numbering suffix) | — |
| RoHS Status | Compliant (lead-free suffix) | [DATA_NEEDED: RoHS status] |
| Refresh | Self-refresh supported (TCSR per DDR4 standard features) | — |
| Supply Voltage (VDD) | — | 1.2 V |
| Core Supply (VPP) | — | 2.5 V |
| Data Mask | — | Yes (DM per byte lane) |
| On-Die Termination | — | Dynamic ODT |
| ZQ Calibration | — | Yes (external RZQ resistor) |
| CRC / CA Parity | — | CRC read/write support |
| Reset | — | Asynchronous reset (RESET_n) |