K4A4G165WG-BCWE vs MT40A512M16LY-062E AAT:E Comparison
Detailed side-by-side comparison of K4A4G165WG-BCWE by Samsung Electronics and MT40A512M16LY-062E AAT:E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A4G165WG-BCWE - 4Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4A4G165WG-BCWE ✓ ActiveMicron Technology
MT40A512M16LY-062E AAT:E - 8Gbit DDR4 SDRAM 1.6GHz | Micron
MT40A512M16LY-062E AAT:E ✓ ActiveSpecification Comparison
| Parameter | K4A4G165WG-BCWE | MT40A512M16LY-062E AAT:E |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $16.90 | $9.20 |
| Memory Type | DDR4 SDRAM (volatile DRAM) | DDR4 SDRAM |
| Memory Size | 4 Gbit | 8 Gbit (1 GB) |
| Memory Organization | 256M x 16 | 512M x 16 |
| Interface | Parallel | Parallel |
| Data Rate | 3200 Mbps | — |
| Access Time | 19 ns | 19 ns |
| Supply Voltage | 1.2 V | 1.2 V |
| Operating Temperature | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| Package | FBGA-96 | 96-FBGA (7.5 x 13.5 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Memory Format | DRAM | — |
| Technology | DDR4 | — |
| Product Status | Active | — |
| RoHS Status | Compliant (per JLCPCB listing) | Compliant |
| Clock Frequency | [DATA_NEEDED: clock frequency / tCK range] | 1.6 GHz |
| CAS Latency | [DATA_NEEDED: CAS latency] | — |
| Refresh Rate | [DATA_NEEDED: refresh interval] | — |
| Speed Grade | — | 062E |
| Package Height | — | [DATA_NEEDED: package max height] |
| MSL Rating | — | [DATA_NEEDED: moisture sensitivity level] |
| Ordering Code Suffix | — | AAT:E (temperature/package option per Micron code) |
| Moisture Packaging | — | [DATA_NEEDED: packing type for AAT:E suffix] |
| Data Rate Class | — | DDR4-3200 (062E speed bin) |