K4A8G045WB vs K4A8G045WB-BCRC Comparison

Detailed side-by-side comparison of K4A8G045WB by Samsung Electronics and K4A8G045WB-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4A8G045WB K4A8G045WB - 8Gb DDR4 SDRAM 2Gx4 2133Mbps 1.2V | Samsung

K4A8G045WB - 8Gb DDR4 SDRAM 2Gx4 2133Mbps 1.2V | Samsung

K4A8G045WB ✓ Active
Samsung Electronics
K4A8G045WB-BCRC K4A8G045WB-BCRC - 8Gb DDR4 2Gx4 2400Mbps B-die | Samsung

K4A8G045WB-BCRC - 8Gb DDR4 2Gx4 2400Mbps B-die | Samsung

K4A8G045WB-BCRC ✓ Active

Specification Comparison

Parameter K4A8G045WB K4A8G045WB-BCRC
Brand Samsung Electronics Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $9.27 $2.95
Memory Type DDR4 SDRAM (B-die) DDR4 SDRAM
Density 8 Gb 8 Gb
Organization 2G x 4 2G x 4
Data Rate 2133 Mbps —
Supply Voltage 1.2 V —
Max Supply Current 211.7 mA —
Operating Temperature 0 C to +85 C 0 C to 85 C
Package 78-ball FBGA 78-ball FBGA (PBGA78)
Refresh Cycles 8192 8192
Mounting Type Surface Mount Surface Mount
Number of Terminals 78 —
Clocking Differential clock (CK / CK#) —
On-Die Termination Yes (ODT pin) —
Asynchronous Reset Yes —
Posted CAS Yes —
Programmable CWL Yes —
Internal (Self) Calibration Yes —
RoHS Status [DATA_NEEDED: RoHS status] Compliant
Speed — 2400 Mbps
Supply Voltage (VDD/VDDQ) — 1.2 V
Process Technology — Samsung B-die
Interface — CMOS, differential clock (CK/CK#)
Maximum Supply Current — 211.7 mA
Terminals — 78
Key DDR4 Features — Posted CAS, Programmable CWL, Internal (Self) Calibration, ODT, Asynchronous Reset
DLL Mode — Timing specified for DLL-enabled operation

Datasheets & Resources

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