K4A8G085WB-BCTD vs K4A8G085WB-BICH Comparison
Detailed side-by-side comparison of K4A8G085WB-BCTD by Samsung Electronics and K4A8G085WB-BICH by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WB-BCTD - 8Gb DDR4 SDRAM 1Gx8 | Samsung | FBGA-78
K4A8G085WB-BCTD ✓ ActiveSpecification Comparison
| Parameter | K4A8G085WB-BCTD | K4A8G085WB-BICH |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $7.50 | $4.96 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gb (1G x 8) | — |
| Supply Voltage | 1.2 V | 1.2V |
| Data Rate | 3200 Mbps (PC4-25600) | 2400 Mbps (DDR4-2400) |
| Speed Bin | CL22-22-22 | — |
| Package | FBGA-78 (TFBGA) | 78-ball FBGA |
| Operating Temperature | 0°C to +95°C (TC) | 0°C to 85°C |
| Burst Length | 8 (BL8) | BL8, BL16 |
| On-Die Termination | Yes (ODT) | — |
| ZQ Calibration | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| Data Mask Function | Yes | — |
| JESD-30 Code | R-PBGA-B78 | — |
| Number of Terminals | 78 | — |
| RoHS Status | Compliant | — |
| Density | — | 8Gb |
| Organization | — | 1G x 8 |
| Max Supply Current | — | 170mA |
| CAS Latency | — | Programmable |
| On-Die ECC | — | Yes |
| Data Bus Inversion | — | Yes |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Die Revision | — | B-die |