K4A8G085WB-BICH - 8Gb DDR4 SDRAM 1Gx8 | Samsung
MPN: K4A8G085WB-BICH β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $6.48 | $6.48 |
| 10 | $6.1 | $61.00 |
| 100 | $5.72 | $572.00 |
| 500 | $5.34 | $2,670.00 |
| 1,000 | $4.96 | $4,960.00 |
Drop-in alternatives for K4A8G085WB-BICH β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
K4A8G085WB-BCPB
β Drop-Inπ Reference alternative (not in catalog)
K4A8G085WB-BCRC
β Drop-Inπ Reference alternative (not in catalog)
K4A8G085WB-BIRC
β Drop-Inπ Reference alternative (not in catalog)
K4A8G085WC-BIWE
β Drop-Inπ Reference alternative (not in catalog)
K4A8G085WB-BCTD
β Drop-Inπ Reference alternative (not in catalog)
K4A8G085WB-BITD
β Drop-Inπ Reference alternative (not in catalog)
K4A8G085WB-BICH Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Density | 8Gb |
| Organization | 1G x 8 |
| Supply Voltage | 1.2V |
| Data Rate | 2400 Mbps (DDR4-2400) |
| Package | 78-ball FBGA |
| Operating Temperature | 0Β°C to 85Β°C |
| Max Supply Current | 170mA |
| Burst Length | BL8, BL16 |
| CAS Latency | Programmable |
| On-Die ECC | Yes |
| Data Bus Inversion | Yes |
| RoHS | Compliant |
| Lead-Free | Yes |
| Die Revision | B-die |
K4A8G085WB-BICH Pin Configuration
| Pin A1 | VDD β Power supply |
| Pin A2 | DQ0 β Data input/output 0 |
| Pin A3 | DQ1 β Data input/output 1 |
| Pin A4 | VSS β Ground |
| Pin B1 | DQ2 β Data input/output 2 |
| Pin B2 | DQ3 β Data input/output 3 |
| Pin B3 | VDD β Power supply |
| Pin B4 | DQ4 β Data input/output 4 |
| Pin C1 | DQ5 β Data input/output 5 |
| Pin C2 | VSS β Ground |
| Pin C3 | DQ6 β Data input/output 6 |
| Pin C4 | DQ7 β Data input/output 7 |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4A8G085WB-BICH is suitable for 6 applications: Server Memory, Networking Equipment, Industrial Computing, Consumer Electronics, Automotive Infotainment, Data Center Storage.
Server Memory
The K4A8G085WB-BICH provides high-density, high-speed memory for servers, enabling fast data processing and virtualization. Its 8Gb density and DDR4-2400 speed support demanding workloads, while 1.2V operation reduces power consumption in data centers. The FBGA-78 package allows compact module designs, and on-die ECC enhances reliability for enterprise applications.
Recommended
Networking Equipment
In networking equipment such as routers and switches, the K4A8G085WB-BICH offers high bandwidth and low latency for packet processing and routing tables. Its 1.2V operation minimizes heat generation, crucial for dense line cards. The x8 organization simplifies board layout, and the wide temperature range supports outdoor and industrial networking gear.
Recommended
Industrial Computing
For industrial PCs and embedded systems, the K4A8G085WB-BICH provides reliable memory operation from 0Β°C to 85Β°C. Its high density supports complex control algorithms and data logging. The FBGA package is robust for harsh environments, and the low power consumption is ideal for fanless designs. On-die ECC helps prevent data corruption in critical applications.
Recommended
Consumer Electronics
In high-end consumer devices like gaming consoles and set-top boxes, the K4A8G085WB-BICH delivers fast memory performance for smooth graphics and multitasking. Its 8Gb density allows for rich multimedia experiences, while 1.2V operation extends battery life in portable devices. The compact FBGA package enables slim product designs.
Recommended
Automotive Infotainment
The K4A8G085WB-BICH supports automotive infotainment systems requiring high memory bandwidth for navigation, multimedia, and driver assistance. Its wide temperature range and reliability make it suitable for vehicle environments. The 1.2V operation reduces power draw, and the FBGA package withstands vibration. On-die ECC enhances data integrity for safety-critical functions.
Recommended
Data Center Storage
In data center storage systems, the K4A8G085WB-BICH provides high-speed cache memory for SSDs and storage controllers. Its 8Gb density and DDR4-2400 speed accelerate data access, while low power consumption reduces operational costs. The FBGA package is ideal for high-density storage arrays, and on-die ECC ensures data integrity in large-scale deployments.
Recommended
Recommended Products Summary
Engineering reference data for K4A8G085WB-BICH β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4A8G085WB-BCPB | K4A8G085WB-BCRC | K4A8G085WB-BIRC |
|---|---|---|---|---|
| Package | 78-ball FBGA | 78-ball FBGA | 78-ball FBGA | 78-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 8Gb | 8Gb | 8Gb | 8Gb |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 |
| Supply Voltage | 1.2V | 1.2V | 1.2V | 1.2V |
| Data Rate | 2400 Mbps | 2400 Mbps | [DATA_NEEDED] | 2400 Mbps |
| Operating Temperature | 0Β°C to 85Β°C | 0Β°C to 85Β°C | [DATA_NEEDED] | -40Β°C to 95Β°C |
| Max Supply Current | 170mA | 170mA | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- B-die process technology (vs K4A8G085WC-BIWE (C-die))
- Wide operating temperature range (vs K4A8G085WB-BCPB)
- On-die ECC support (vs K4A8G085WB-BCRC)
Design Notes
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin to minimize power supply noise. Use a solid ground plane and route DQ signals with matched trace lengths to ensure signal integrity. Follow the layout guidelines in the Samsung datasheet for optimal performance.
The K4A8G085WB-BICH operates up to 85Β°C. Ensure adequate airflow or heatsinking in high-temperature environments. The max supply current is 170mA, so power dissipation is moderate, but thermal management is still important for reliability.
Use on-die termination (ODT) settings to match the memory controller's impedance and reduce reflections. Set the appropriate ODT values in the memory controller registers. Also, enable data bus inversion (DBI) to reduce simultaneous switching noise.
Compliance Information
RoHS compliant per Samsung datasheet. Lead-free. AEC-Q100 not applicable for memory components.
