K4A8G085WB-BICR vs K4A8G045WB-BCRC Comparison

Detailed side-by-side comparison of K4A8G085WB-BICR by Samsung Electronics and K4A8G045WB-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4A8G085WB-BICR K4A8G085WB-BICR - Samsung 8Gb DDR4 1Gx8 2400Mbps Industrial

K4A8G085WB-BICR - Samsung 8Gb DDR4 1Gx8 2400Mbps Industrial

K4A8G085WB-BICR ✓ Active
Samsung Electronics
K4A8G045WB-BCRC K4A8G045WB-BCRC - 8Gb DDR4 2Gx4 2400Mbps B-die | Samsung

K4A8G045WB-BCRC - 8Gb DDR4 2Gx4 2400Mbps B-die | Samsung

K4A8G045WB-BCRC ✓ Active

Specification Comparison

Parameter K4A8G085WB-BICR K4A8G045WB-BCRC
Brand Samsung Electronics Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $4.25 $2.95
Memory Type DDR4 SDRAM DDR4 SDRAM
Density 8 Gb 8 Gb
Organization 1G x 8 2G x 4
Data Rate 2400 Mbps —
Supply Voltage 1.2 V (VDD/VDDQ) —
Number of Banks 16 —
Refresh Cycles 8192 8192
Package 78-ball FBGA 78-ball FBGA (PBGA78)
Pin Count 78 —
Mounting Type Surface Mount Surface Mount
Temperature Grade Industrial (I-grade) —
Operating Temperature Range [DATA_NEEDED: exact temperature range for BICR industrial suffix] —
Die / Process Samsung 8Gb B-die DDR4 —
Speed Grade DDR4-2400 (PC4-19200) —
RoHS Status Compliant Compliant
Lead-Free Yes —
Refresh Management Row refresh, auto-refresh and self-refresh supported —
Speed — 2400 Mbps
Supply Voltage (VDD/VDDQ) — 1.2 V
Process Technology — Samsung B-die
Interface — CMOS, differential clock (CK/CK#)
Maximum Supply Current — 211.7 mA
Operating Temperature — 0 C to 85 C
Terminals — 78
Key DDR4 Features — Posted CAS, Programmable CWL, Internal (Self) Calibration, ODT, Asynchronous Reset
DLL Mode — Timing specified for DLL-enabled operation

Datasheets & Resources

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