K4A8G085WB-BIRC vs K4A8G085WB Comparison
Detailed side-by-side comparison of K4A8G085WB-BIRC by Samsung Electronics and K4A8G085WB by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A8G085WB-BIRC | K4A8G085WB |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.56 | $5.20 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM (B-die) |
| Density | 8 Gb | 8 Gbit |
| Organization | 1G x 8 | 1G x 8 |
| Data Rate | 2400 Mbps | [DATA_NEEDED: speed grade data rate in Mbps] |
| Supply Voltage | 1.2 V | 1.2 V |
| Operating Temperature | -40°C to 95°C | [DATA_NEEDED: operating temperature range] |
| Package | 78-FBGA | 78-pin FBGA |
| Number of Terminals | 78 | — |
| Refresh Cycles | 8192 | — |
| Die Family | B-die | — |
| CAS Latency | [DATA_NEEDED: CAS Latency] | — |
| Burst Length | 8, 16 | — |
| Interface | SSTL-12 | — |
| RoHS | Compliant | — |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Mode | — | DLL Enabled mode (per datasheet) |
| Speed Grade Suffixes | — | -BCRC, -BIRC, -BCTD, -BCPB (per family naming) |
| tCL/cas latency | — | [DATA_NEEDED: CAS latency] |
| Refresh | — | [DATA_NEEDED: refresh rate 1x/2x] |
| Bank Groups | — | [DATA_NEEDED: bank/bank group count] |
| Package Dimensions | — | [DATA_NEEDED: package dimensions] |
| MSL Level | — | [DATA_NEEDED: moisture sensitivity level] |
| RoHS Status | — | [DATA_NEEDED: RoHS status] |
| Termination Voltage (VTT) | — | [DATA_NEEDED: VTT value] |