K4A8G085WB-BIRC vs K4A8G085WB Vergleich
Detaillierter Direktvergleich von K4A8G085WB-BIRC von Samsung Electronics und K4A8G085WB von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K4A8G085WB-BIRC | K4A8G085WB |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $6,56 | $5,20 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM (B-die) |
| Density | 8 Gb | 8 Gbit |
| Speicherorganisation | 1G x 8 | 1G x 8 |
| Datenrate | 2400 Mbps | [DATA_NEEDED: speed grade data rate in Mbps] |
| Versorgungsspannung | 1.2 V | 1.2 V |
| Betriebstemperatur | -40°C to 95°C | [DATA_NEEDED: operating temperature range] |
| Gehäuse | 78-FBGA | 78-pin FBGA |
| Number of Terminals | 78 | — |
| Refresh Cycles | 8192 | — |
| Die Family | B-die | — |
| CAS-Latenz | [DATA_NEEDED: CAS Latency] | — |
| Burst Length | 8, 16 | — |
| Schnittstelle | SSTL-12 | — |
| RoHS | Compliant | — |
| Montageart | Surface Mount | Surface Mount |
| Operating Mode | — | DLL Enabled mode (per datasheet) |
| Speed Grade Suffixes | — | -BCRC, -BIRC, -BCTD, -BCPB (per family naming) |
| tCL/cas latency | — | [DATA_NEEDED: CAS latency] |
| Refresh | — | [DATA_NEEDED: refresh rate 1x/2x] |
| Bank Groups | — | [DATA_NEEDED: bank/bank group count] |
| Package Dimensions | — | [DATA_NEEDED: package dimensions] |
| MSL-Level | — | [DATA_NEEDED: moisture sensitivity level] |
| RoHS-Status | — | [DATA_NEEDED: RoHS status] |
| Termination Voltage (VTT) | — | [DATA_NEEDED: VTT value] |