K4A8G085WB vs K4A8G085WB-BCPB Comparison

Detailed side-by-side comparison of K4A8G085WB by Samsung Electronics and K4A8G085WB-BCPB by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4A8G085WB K4A8G085WB - 8Gb B-die DDR4 SDRAM 1Gx8 | Samsung

K4A8G085WB - 8Gb B-die DDR4 SDRAM 1Gx8 | Samsung

K4A8G085WB ✓ Active
Samsung Electronics
K4A8G085WB-BCPB K4A8G085WB-BCPB - 8Gb DDR4 SDRAM 3200Mbps | Samsung

K4A8G085WB-BCPB - 8Gb DDR4 SDRAM 3200Mbps | Samsung

K4A8G085WB-BCPB ✓ Active

Specification Comparison

Parameter K4A8G085WB K4A8G085WB-BCPB
Brand Samsung Electronics Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $5.20 $13.78
Memory Type DDR4 SDRAM (B-die) DDR4 SDRAM
Density 8 Gbit 8 Gbit
Organization 1G x 8 1G x 8
Supply Voltage 1.2 V 1.2 V (nominal)
Package 78-pin FBGA 78-ball FBGA
Mounting Type Surface Mount Surface Mount (BGA)
Operating Mode DLL Enabled mode (per datasheet) DLL enabled
Speed Grade Suffixes -BCRC, -BIRC, -BCTD, -BCPB (per family naming) —
Data Rate [DATA_NEEDED: speed grade data rate in Mbps] 3200 Mbps (PC4-25600)
tCL/cas latency [DATA_NEEDED: CAS latency] —
Operating Temperature [DATA_NEEDED: operating temperature range] —
Refresh [DATA_NEEDED: refresh rate 1x/2x] —
Bank Groups [DATA_NEEDED: bank/bank group count] —
Package Dimensions [DATA_NEEDED: package dimensions] 11 mm x 11 mm
MSL Level [DATA_NEEDED: moisture sensitivity level] —
RoHS Status [DATA_NEEDED: RoHS status] Compliant
Termination Voltage (VTT) [DATA_NEEDED: VTT value] —
Speed Grade — BC
CAS Latency (CL) — 22
Burst Length — 8
Bank Architecture — 16 banks (4 bank groups)
Refresh Interval — 7.8 us (up to 85C)
Interface Type — SSTL-12
Termination — ODT / dynamic ODT
Self-Refresh — Temperature-Compensated Self-Refresh (TCSR)

Datasheets & Resources

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