K4A8G085WB vs K4A8G085WB-BCPB Vergleich
Detaillierter Direktvergleich von K4A8G085WB von Samsung Electronics und K4A8G085WB-BCPB von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K4A8G085WB | K4A8G085WB-BCPB |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $5,20 | $13,78 |
| Speichertyp | DDR4 SDRAM (B-die) | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gbit |
| Speicherorganisation | 1G x 8 | 1G x 8 |
| Versorgungsspannung | 1.2 V | 1.2 V (nominal) |
| Gehäuse | 78-pin FBGA | 78-ball FBGA |
| Montageart | Surface Mount | Surface Mount (BGA) |
| Operating Mode | DLL Enabled mode (per datasheet) | DLL enabled |
| Speed Grade Suffixes | -BCRC, -BIRC, -BCTD, -BCPB (per family naming) | — |
| Datenrate | [DATA_NEEDED: speed grade data rate in Mbps] | 3200 Mbps (PC4-25600) |
| tCL/cas latency | [DATA_NEEDED: CAS latency] | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | — |
| Refresh | [DATA_NEEDED: refresh rate 1x/2x] | — |
| Bank Groups | [DATA_NEEDED: bank/bank group count] | — |
| Package Dimensions | [DATA_NEEDED: package dimensions] | 11 mm x 11 mm |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | Compliant |
| Termination Voltage (VTT) | [DATA_NEEDED: VTT value] | — |
| Speed Grade | — | BC |
| CAS Latency (CL) | — | 22 |
| Burst Length | — | 8 |
| Bank Architecture | — | 16 banks (4 bank groups) |
| Refresh Interval | — | 7.8 us (up to 85C) |
| Schnittstellentyp | — | SSTL-12 |
| Termination | — | ODT / dynamic ODT |
| Self-Refresh | — | Temperature-Compensated Self-Refresh (TCSR) |