K4A8G085WB vs K4A8G085WB-BIRC Comparison

Detailed side-by-side comparison of K4A8G085WB by Samsung Electronics and K4A8G085WB-BIRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4A8G085WB K4A8G085WB - 8Gb B-die DDR4 SDRAM 1Gx8 | Samsung

K4A8G085WB - 8Gb B-die DDR4 SDRAM 1Gx8 | Samsung

K4A8G085WB ✓ Active
Samsung Electronics
K4A8G085WB-BIRC K4A8G085WB-BIRC - 8Gb DDR4 SDRAM 2400Mbps | Samsung

K4A8G085WB-BIRC - 8Gb DDR4 SDRAM 2400Mbps | Samsung

K4A8G085WB-BIRC ✓ Active

Specification Comparison

Parameter K4A8G085WB K4A8G085WB-BIRC
Brand Samsung Electronics Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $5.20 $6.56
Memory Type DDR4 SDRAM (B-die) DDR4 SDRAM
Density 8 Gbit 8 Gb
Organization 1G x 8 1G x 8
Supply Voltage 1.2 V 1.2 V
Package 78-pin FBGA 78-FBGA
Mounting Type Surface Mount Surface Mount
Operating Mode DLL Enabled mode (per datasheet) —
Speed Grade Suffixes -BCRC, -BIRC, -BCTD, -BCPB (per family naming) —
Data Rate [DATA_NEEDED: speed grade data rate in Mbps] 2400 Mbps
tCL/cas latency [DATA_NEEDED: CAS latency] —
Operating Temperature [DATA_NEEDED: operating temperature range] -40°C to 95°C
Refresh [DATA_NEEDED: refresh rate 1x/2x] —
Bank Groups [DATA_NEEDED: bank/bank group count] —
Package Dimensions [DATA_NEEDED: package dimensions] —
MSL Level [DATA_NEEDED: moisture sensitivity level] —
RoHS Status [DATA_NEEDED: RoHS status] —
Termination Voltage (VTT) [DATA_NEEDED: VTT value] —
Number of Terminals — 78
Refresh Cycles — 8192
Die Family — B-die
CAS Latency — [DATA_NEEDED: CAS Latency]
Burst Length — 8, 16
Interface — SSTL-12
RoHS — Compliant

Datasheets & Resources

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