K4A8G085WC-BCTD vs H5AN8G8NAFR-PBC Comparison
Detailed side-by-side comparison of K4A8G085WC-BCTD by Samsung Electronics and H5AN8G8NAFR-PBC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung
K4A8G085WC-BCTD ⚠ Last Time BuySpecification Comparison
| Parameter | K4A8G085WC-BCTD | H5AN8G8NAFR-PBC |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | DRAM |
| Lifecycle Status | Last Time Buy | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $50.85 | $2.20 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 |
| Data Rate | 2666 Mbps (PC4-2133) | — |
| Supply Voltage (VDD/VDDQ) | 1.2 V (1.14 V to 1.26 V) | — |
| Package | 78-ball FBGA (78FBGA) | FBGA-78 |
| Ball Pitch | 0.8 mm | — |
| Operating Temperature | 0C to +95C | [DATA_NEEDED: operating temperature range] |
| Standard Operating Temp Range | 0C to +85C | — |
| Burst Length | 8 (chop 4) | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic ODT | Yes | — |
| Data Mask | Yes | — |
| Interface Type | Synchronous, parallel | — |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | [DATA_NEEDED: RoHS status] | Compliant |
| Supply Voltage | — | 1.2 V |
| Speed Grade / Data Rate | — | [DATA_NEEDED: speed grade / data rate] |
| Interface | — | DDR4 (double data rate, synchronized to clock) |
| Address Inputs | — | A0 - A17 (A10/AP, A12/BC_n, RAS_n/A16, CAS_n/A15, WE_n/A14 multiplexed) |
| Connectivity Test Mode | — | TEN (optional input on x4/x8, required on x16) |
| Process Technology | — | CMOS |
| Lead-Free | — | Yes |
| Halogen Free | — | Yes |
| Datasheet Revision | — | Rev. 1.2 / July 2017 |