K4A8G085WC-BCTD vs H5AN8G8NCJR-VKI Comparison
Detailed side-by-side comparison of K4A8G085WC-BCTD by Samsung Electronics and H5AN8G8NCJR-VKI by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung
K4A8G085WC-BCTD ⚠ Last Time BuySpecification Comparison
| Parameter | K4A8G085WC-BCTD | H5AN8G8NCJR-VKI |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Last Time Buy | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $50.85 | $4.85 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organization | 1G x 8 | — |
| Data Rate | 2666 Mbps (PC4-2133) | 2666 Mbps |
| Supply Voltage (VDD/VDDQ) | 1.2 V (1.14 V to 1.26 V) | — |
| Package | 78-ball FBGA (78FBGA) | FBGA-78 |
| Ball Pitch | 0.8 mm | — |
| Operating Temperature | 0C to +95C | [DATA_NEEDED: Operating Temperature] |
| Standard Operating Temp Range | 0C to +85C | — |
| Burst Length | 8 (chop 4) | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic ODT | Yes | — |
| Data Mask | Yes | — |
| Interface Type | Synchronous, parallel | — |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS Status] |
| Memory Size | — | 8 Gb |
| Memory Organization | — | 1G x8 |
| Supply Voltage | — | 1.2 V |
| Interface | — | Parallel |
| Memory Format | — | DRAM |
| Volatile | — | Yes |
| Grade | — | Industrial (I suffix) |
| Technology | — | CMOS |
| Product Family | — | H5AN8G8NCJR-xxC/xI DDR4 SDRAM |
| Packaging | — | Tray |
| Product Status | — | Active |