K4A8G085WC-BCWE vs MT40A1G8AG-062E Comparison
Detailed side-by-side comparison of K4A8G085WC-BCWE by Samsung Electronics and MT40A1G8AG-062E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A8G085WC-BCWE | MT40A1G8AG-062E |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $7.38 | $3.10 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organization | 1G x 8 | 1G x 8 |
| Data Rate | 3200 Mbps (DDR4-3200) | — |
| Supply Voltage | 1.2 V | — |
| Operating Temperature | 0C to +85C | — |
| Package | 78FBGA | 78-FBGA (7.5 x 11 mm) |
| Mounting Type | Surface Mount | Surface Mount (BGA) |
| Interface | DDR4 (parallel, double data rate) | Parallel |
| Application Class | Computing / Embedded main memory | — |
| Manufacturer | Samsung Electronics | — |
| Bank Group Architecture | DDR4 bank groups (8n prefetch) | Yes (DDR4 bank groups) |
| Speed Bin Suffix | -BCWE (DDR4-3200, commercial temp) | — |
| RoHS Status | Compliant (per JLCPCB listing) | [DATA_NEEDED: RoHS status] |
| Refresh | Standard DDR4 refresh mechanisms | — |
| On-Die Termination | Yes (DDR4 ODT) | — |
| Memory Size | — | 8 Gbit |
| Clock Frequency | — | 1.6 GHz (DDR4-3200, 3200 MT/s data rate) |
| Clock Cycle Time | — | 19 ns class (-062E speed grade) |
| Supply Voltage (VDD) | — | 1.2 V |
| Temperature Grade | — | Automotive (AUT) |
| Access Time (CAS Latency class) | — | DDR4-3200 timing class (tAA per datasheet) |
| Termination | — | On-Die Termination (ODT) |
| CA Parity | — | Supported (DDR4 command/address parity) |
| Packaging Option | — | Tape and Reel (TR / :R suffix) |
| Operating Temperature Range | — | [DATA_NEEDED: operating temperature range] |
| Refresh Rate | — | [DATA_NEEDED: refresh rate] |