K4A8G085WC-BCWE - 8Gb DDR4-3200 DRAM 1.2V | Samsung
MPN: K4A8G085WC-BCWE ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $5.76 | $5.76 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
Drop-in alternatives for K4A8G085WC-BCWE — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
K4A8G085WC-BIWE
✅ Drop-In✓ In Stock
$6.29 / Unit
View Datasheet →K4A8G085WC-BCTD
✅ Drop-In✓ In Stock
$50.85 / Unit
View Datasheet →K4A8G085WC-BCRC
✅ Drop-In✓ In Stock
$4.3 / Unit
View Datasheet →K4A8G085WC-BCPB
✅ Drop-In✓ In Stock
$2.95 / Unit
View Datasheet →K4A8G085WB-BCWE
✅ Drop-In✓ In Stock
$4.28 / Unit
View Datasheet →K4A8G085WC-BCWE Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Density | 8 Gb |
| Organization | 1G x 8 |
| Data Rate | 3200 Mbps (DDR4-3200) |
| Supply Voltage | 1.2 V |
| Operating Temperature | 0C to +85C |
| Package | 78FBGA |
| Mounting Type | Surface Mount |
| Interface | DDR4 (parallel, double data rate) |
| Application Class | Computing / Embedded main memory |
| Manufacturer | Samsung Electronics |
| Bank Group Architecture | DDR4 bank groups (8n prefetch) |
| Speed Bin Suffix | -BCWE (DDR4-3200, commercial temp) |
| RoHS Status | Compliant (per JLCPCB listing) |
| Refresh | Standard DDR4 refresh mechanisms |
| On-Die Termination | Yes (DDR4 ODT) |
K4A8G085WC-BCWE 78fbga Pin Configuration Guide
Complete pinout information for K4A8G085WC-BCWE (78fbga package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for K4A8G085WC-BCWE.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4A8G085WC-BCWE is suitable for 6 applications: Desktop and Workstation Main Memory, Embedded Industrial Controllers, Networking and Communication Equipment, Computing Modules (COM Express / SODIMM Carrier Boards), Replacement Sourcing and BOM Continuity, Gaming and Graphics Workloads.
Desktop and Workstation Main Memory
The K4A8G085WC-BCWE serves as discrete main memory in desktop and workstation platforms, where its DDR4-3200 data rate delivers 25.6 GB/s of peak bandwidth per 64-bit channel. The 8 Gb, 1G x 8 organization allows module designers to build 8 GB UDIMMs with eight chips or 16 GB DIMMs with sixteen, all on the fly-by command/address topology DDR4 mandates. Its listing on AMD Ryzen validator lists and Intel DRAM compatibility lists confirms platform acceptance. Compared with DDR3 predecessors, the 1.2 V supply cuts memory subsystem power significantly, improving thermal design margin in compact cases. Designers should confirm the memory controller supports the -BCWE timing tables via BIOS memory training before release.
Recommended
Embedded Industrial Controllers
Industrial controllers, IPCs, and HMI panels use the K4A8G085WC-BCWE as code and data memory alongside processors such as the TI AM263P or NXP i.MX families. The 8 Gb density in a single 78FBGA die simplifies BOM and board space compared with stacking smaller chips, while the DDR4-3200 bin gives headroom for frame buffers and logging workloads. Because industrial environments demand wider temperature ranges, designs targeting -40C should instead use the pin-identical K4A8G085WC-BIWE industrial variant, which requires zero PCB redesign per Samsung's migration guide. Layout must follow DDR4 fly-by routing with ODT tuning; the 1.2 V VDDQ rail needs a low-noise buck regulator such as the TPS54218 for clean power.
Recommended
Networking and Communication Equipment
Routers, switches, and network appliances rely on the K4A8G085WC-BCWE for packet buffering, routing tables, and control-plane memory. The x8 organization and 3200 Mbps per-pin rate provide the sustained bandwidth needed for gigabit and multi-gigabit line-rate forwarding, while 8 Gb per chip keeps chip count low on dense line cards. DDR4 bank-group architecture with 8n prefetch improves random-access efficiency for scattered packet buffers, an advantage over DDR3 in network workloads. Thermal conditions in fanless or constrained networking enclosures favor the 1.2 V operating voltage, which lowers DRAM idle and active power relative to DDR3-era parts. Validate the speed bin against the network processor's supported DDR4 frequency before layout.
Recommended
Computing Modules (COM Express / SODIMM Carrier Boards)
Computer-on-module carrier designs and SODIMM-based embedded systems use the K4A8G085WC-BCWE either as soldered-down memory on the module or as reference for module DRAM qualification. The 78FBGA package supports the standard DDR4 land pattern used across carrier and module boards, enabling drop-in substitution among Samsung speed bins (BCTD, BCRC, BCPB) during supply shortages without PCB respins - a critical advantage for long-lifecycle embedded products. The DDR4-3200 rating matches the memory interface speed of modern embedded x86 and ARM SoCs used in COM Express Type 6 and Type 10 modules. Power-up initialization and training sequences must follow the Samsung datasheet exactly to pass BIOS-level memory training.
Recommended
Replacement Sourcing and BOM Continuity
As Samsung shifts capacity toward DDR5 and HBM, buyers maintaining legacy DDR4-based products use the K4A8G085WC-BCWE and its family members for last-time-buy and continuity planning. The verified cross-reference data shows the full ordering code - not just the 8 Gb headline - determines substitution safety: organization, package, temperature class, speed bin, and die generation (WB vs WC) must all match controller assumptions. This page's alternatives table ranks the K4A8G085WC-BIWE, -BCTD, -BCRC, and -BCPB by parametric proximity, letting procurement prioritize validated drop-ins. Buyers should verify date codes and run incoming inspection when sourcing DDR4 through secondary distributors, since market volatility has increased counterfeit risk in this segment.
Recommended
Gaming and Graphics Workloads
Gaming consoles, GPUs with discrete memory controllers, and high-frame-rate graphics workloads use the K4A8G085WC-BCWE where GDDR is unnecessary but sustained bandwidth matters. The DDR4-3200 speed bin supplies 25.6 GB/s per 64-bit channel, and multiple x8 devices can be ganged into 128-bit or 256-bit buses for proportionally higher aggregate bandwidth. On-die termination reduces the external component count needed for high-speed signal integrity, cutting BOM cost on multi-chip graphics boards. The 1.2 V rail simplifies power delivery versus DDR3's dual 1.5 V/1.35 V schemes, important in thermally constrained GPU boards. Designers should place the DRAM within tight length-matching windows and validate eye diagrams at 3200 Mbps on their stackup.
Recommended
Recommended Products Summary
Engineering reference data for K4A8G085WC-BCWE — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4A8G085WC-BIWE | K4A8G085WC-BCTD | K4A8G085WC-BCRC | K4A8G085WC-BCPB | K4A8G085WB-BCWE |
|---|---|---|---|---|---|---|
| Package | 78FBGA | 78FBGA - same | 78FBGA - same | 78FBGA - same | 78FBGA - same | 78FBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 |
| Data Rate | 3200 Mbps (DDR4-3200) | 3200 Mbps (industrial grade) | 2666 Mbps (DDR4-2666) | 2400 Mbps (DDR4-2400) | 2133 Mbps class | 3200 Mbps (DDR4-3200) |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0C to +85C | -40C to +85C (industrial) | 0C to +85C | 0C to +85C | 0C to +85C | 0C to +85C |
| Die Generation | C-die | C-die | C-die | C-die | C-die | B-die (timing differences) |
Key Differentiators
- Fastest speed bin in the WC family (vs K4A8G085WC-BCTD)
- C-die timing consistency (vs K4A8G085WB-BCWE)
- Commercial-temperature cost advantage (vs K4A8G085WC-BIWE)
Design Notes
Power the K4A8G085WC-BCWE from a clean 1.2 V rail for both VDD and VDDQ. A synchronous buck such as the TI TPS54218 with 22 uF of bulk and per-ball 100 nF decoupling provides the low ripple DDR4 requires. Follow the Samsung datasheet power-up initialization sequence exactly: stabilize VDD before applying CK/CK# and completing reset/controller initialization, otherwise memory training may fail intermittently.
DDR4-3200 signaling (1600 MHz clock, 3200 Mbps per pin) demands disciplined fly-by command/address routing and per-byte length-matched data groups. Use on-die termination (ODT) settings from the controller training algorithm and simulate eye diagrams on your stackup. Slower bins (-BCRC at 2400 Mbps) tolerate looser geometry, so if SI margin is insufficient at 3200 Mbps, switching to the drop-in BCTD/BCRC speed bin recovers margin without PCB respin.
Do not substitute B-die (K4A8G085WB) and C-die (K4A8G085WC) parts without validation: cross-reference analysis reports critical timing differences between the generations despite identical 8 Gb/x8/3200/78FBGA headline specs. Also verify the temperature suffix - the -BCWE commercial grade (0C to +85C) is not a substitute for industrial designs; use the -BIWE. Finally, cross-brand DDR4 swaps (Micron/Hynix) require controller supported-MPN validation and are not true drop-ins.
Compliance Information
RoHS compliant per JLCPCB and LCSC product listings. REACH, halogen-free, and conflict-minerals declarations not present in retrieved data; request formal certificates from Samsung if required.
