K4A8G085WC-BIWE vs K4A8G085WB-BICH Comparison
Detailed side-by-side comparison of K4A8G085WC-BIWE by Samsung Electronics and K4A8G085WB-BICH by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A8G085WC-BIWE | K4A8G085WB-BICH |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.29 | $4.96 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8Gb |
| Organization | 1G x 8 | 1G x 8 |
| Data Rate | 3200 Mbps | 2400 Mbps (DDR4-2400) |
| Supply Voltage (VDD) | 1.2 V | — |
| Supply Voltage (VDDQ) | 1.2 V | — |
| Operating Temperature Range | -40°C to +95°C | — |
| Package | 78-FBGA | 78-ball FBGA |
| Mounting Type | Surface Mount | — |
| Interface | POD-12 | — |
| Burst Length | 8 (BL8), 4 (BC4) | BL8, BL16 |
| CAS Latency | 22 (CL22) | Programmable |
| Refresh | Auto-refresh, self-refresh | — |
| RoHS Status | Compliant | — |
| Lead-Free | Yes | Yes |
| Supply Voltage | — | 1.2V |
| Operating Temperature | — | 0°C to 85°C |
| Max Supply Current | — | 170mA |
| On-Die ECC | — | Yes |
| Data Bus Inversion | — | Yes |
| RoHS | — | Compliant |
| Die Revision | — | B-die |