K4A8G085WC-BIWE vs MT40A512M16JY-07EAIT:B Comparison
Detailed side-by-side comparison of K4A8G085WC-BIWE by Samsung Electronics and MT40A512M16JY-07EAIT:B by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT40A512M16JY-07EAIT:B - 8Gb DDR4 SDRAM 512Mx16 | Micron
MT40A512M16JY-07EAIT:B ✓ ActiveSpecification Comparison
| Parameter | K4A8G085WC-BIWE | MT40A512M16JY-07EAIT:B |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.29 | $8.10 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organization | 1G x 8 | 512M x 16 |
| Data Rate | 3200 Mbps | 2666 MT/s |
| Supply Voltage (VDD) | 1.2 V | — |
| Supply Voltage (VDDQ) | 1.2 V | — |
| Operating Temperature Range | -40°C to +95°C | -40°C to +105°C (AIT grade) |
| Package | 78-FBGA | 96-FBGA (8x14) |
| Mounting Type | Surface Mount | — |
| Interface | POD-12 | Parallel |
| Burst Length | 8 (BL8), 4 (BC4) | — |
| CAS Latency | 22 (CL22) | — |
| Refresh | Auto-refresh, self-refresh | — |
| RoHS Status | Compliant | — |
| Lead-Free | Yes | — |
| Memory Size | — | 8 Gbit |
| Clock Frequency | — | 1.33 GHz |
| Supply Voltage (VDD/VDDQ) | — | 1.2V ±60mV |
| VPP Voltage | — | 2.5V, -125mV, +250mV |
| Refresh Time | — | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C |
| I/O Type | — | 1.2V pseudo open-drain |
| VREFDQ | — | On-die, internal, adjustable |
| AEC-Q100 | — | Qualified (AIT suffix) |
| RoHS | — | Compliant |