K4AAG085WM-BCRC vs K4AAG085WM-BCWE Comparison
Detailed side-by-side comparison of K4AAG085WM-BCRC by Samsung Electronics and K4AAG085WM-BCWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4AAG085WM-BCRC | K4AAG085WM-BCWE |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | DRAM |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.00 | $7.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | [DATA_NEEDED: exact density in Gb] | 16 Gb |
| Organization | x8 | 2G x 8 |
| Supply Voltage (VDD) | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Max Data Rate | Up to 3200 Mbps/pin (family max per Samsung DDR4 page) | — |
| Interface | SSTL12 | DDR4 (JEDEC-standard) |
| Package | 78-ball FBGA | 78FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Architecture | Bank-group DDR4 | — |
| Termination | On-Die Termination (ODT) | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| CAS Latency | [DATA_NEEDED: CL of -BCRC speed grade] | — |
| Clock | Differential clock CK/CK# | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| MSL Level | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: MSL level] |
| Data Rate | — | 3200 Mbps (DDR4-3200) |
| Supply Voltage | — | 1.2 V |
| Bank Group Architecture | — | Yes (DDR4) |
| Speed Grade Suffix | — | -BCWE |
| Application Class | — | Memory IC / Storage Component |
| Power Reduction vs DDR3 | — | Approx. 25% lower (per Samsung DDR4 literature) |