K4AAG085WM-BCWE vs K4AAG085WA-BCTD Comparison
Detailed side-by-side comparison of K4AAG085WM-BCWE by Samsung Electronics and K4AAG085WA-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4AAG085WM-BCWE | K4AAG085WA-BCTD |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | DRAM | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $7.00 | $10.18 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gb | 16 Gbit (2 GB) |
| Organization | 2G x 8 | 2G x 8 |
| Data Rate | 3200 Mbps (DDR4-3200) | 2666 Mbps |
| Supply Voltage | 1.2 V | 1.2 V |
| Operating Temperature | 0C to +85C | 0C to +85C |
| Package | 78FBGA | 78-ball FBGA (78FBGA) |
| Mounting Type | Surface Mount | Surface Mount |
| Interface | DDR4 (JEDEC-standard) | DDR4 parallel, JEDEC DDR4 ballout |
| Bank Group Architecture | Yes (DDR4) | — |
| Speed Grade Suffix | -BCWE | — |
| Application Class | Memory IC / Storage Component | — |
| Power Reduction vs DDR3 | Approx. 25% lower (per Samsung DDR4 literature) | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | — |
| Speed Grade | — | DDR4-2666 (-BCTD) |
| Bank Architecture | — | 16 banks in 4 bank groups (DDR4 standard) |
| Burst Length | — | BL8 (DDR4 standard) |
| Application Domain | — | Computing, networking, industrial memory |
| Manufacturing Standard | — | JEDEC DDR4 SDRAM |
| Lead Time / Stock | — | [DATA_NEEDED: current stock status] |