K4AAG085WM-BCWE vs K4AAG085WA-BCWE Comparison
Detailed side-by-side comparison of K4AAG085WM-BCWE by Samsung Electronics and K4AAG085WA-BCWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4AAG085WM-BCWE | K4AAG085WA-BCWE |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | DRAM | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $7.00 | $7.24 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gb | 16 Gbit |
| Organization | 2G x 8 | 2G x 8 |
| Data Rate | 3200 Mbps (DDR4-3200) | 3200 Mbps (DDR4-3200) |
| Supply Voltage | 1.2 V | 1.2 V |
| Operating Temperature | 0C to +85C | 0 C to 85 C |
| Package | 78FBGA | 78-ball FBGA (9 x 11 mm, 0.8 mm pitch) |
| Mounting Type | Surface Mount | Surface Mount |
| Interface | DDR4 (JEDEC-standard) | JEDEC DDR4 |
| Bank Group Architecture | Yes (DDR4) | — |
| Speed Grade Suffix | -BCWE | — |
| Application Class | Memory IC / Storage Component | Main memory / embedded DRAM |
| Power Reduction vs DDR3 | Approx. 25% lower (per Samsung DDR4 literature) | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | Compliant (per JLCPCB listing) |
| MSL Level | [DATA_NEEDED: MSL level] | — |
| Operating Voltage Range | — | 1.14 V to 1.26 V |
| Memory Width | — | 8-bit |
| Refresh | — | Auto-refresh (per JEDEC DDR4) |
| Manufacturer | — | Samsung Electronics |