K4AAG085WM-BCWE vs K4AAG085WM-BCRC Comparison
Detailed side-by-side comparison of K4AAG085WM-BCWE by Samsung Electronics and K4AAG085WM-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4AAG085WM-BCWE | K4AAG085WM-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | DRAM | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $7.00 | $1.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gb | [DATA_NEEDED: exact density in Gb] |
| Organization | 2G x 8 | x8 |
| Data Rate | 3200 Mbps (DDR4-3200) | — |
| Supply Voltage | 1.2 V | — |
| Operating Temperature | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| Package | 78FBGA | 78-ball FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Interface | DDR4 (JEDEC-standard) | SSTL12 |
| Bank Group Architecture | Yes (DDR4) | — |
| Speed Grade Suffix | -BCWE | — |
| Application Class | Memory IC / Storage Component | — |
| Power Reduction vs DDR3 | Approx. 25% lower (per Samsung DDR4 literature) | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| MSL Level | [DATA_NEEDED: MSL level] | [DATA_NEEDED: moisture sensitivity level] |
| Supply Voltage (VDD) | — | 1.2 V |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Max Data Rate | — | Up to 3200 Mbps/pin (family max per Samsung DDR4 page) |
| Architecture | — | Bank-group DDR4 |
| Termination | — | On-Die Termination (ODT) |
| CAS Latency | — | [DATA_NEEDED: CL of -BCRC speed grade] |
| Clock | — | Differential clock CK/CK# |