K4AAG165WM-BCWE vs MT40A256M16GE-075E:B Comparison

Detailed side-by-side comparison of K4AAG165WM-BCWE by Samsung Electronics and MT40A256M16GE-075E:B by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4AAG165WM-BCWE K4AAG165WM-BCWE - 16Gb DDR4-3200 SDRAM x16 | Samsung

K4AAG165WM-BCWE - 16Gb DDR4-3200 SDRAM x16 | Samsung

K4AAG165WM-BCWE ✓ Active
Micron Technology
MT40A256M16GE-075E:B MT40A256M16GE-075E:B - 4Gb DDR4 SDRAM 2666 MT/s | Micron

MT40A256M16GE-075E:B - 4Gb DDR4 SDRAM 2666 MT/s | Micron

MT40A256M16GE-075E:B ✓ Active

Specification Comparison

Parameter K4AAG165WM-BCWE MT40A256M16GE-075E:B
Brand Samsung Electronics Micron Technology
Category DRAM Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $54.65 $3.95
Memory Type DDR4 SDRAM DDR4 SDRAM
Density 16 Gbit —
Organization 256M x 16 (1G x 16) 256M x 16
Data Rate 3200 Mbps 2666 MT/s (DDR4-2666)
Interface Parallel (DDR4) —
Supply Voltage VDD 1.2 V —
Supply Voltage VDDQ 1.2 V —
Access Time (Clock Cycle Time) [DATA_NEEDED: tCK for BCWE bin] —
CAS Latency [DATA_NEEDED: CL at 3200 Mbps] —
Bank Groups 4 (x16 configuration) —
Burst Length 8 —
Package 78-ball FBGA 96-FBGA (9 x 14 mm)
Mounting Type Surface Mount Surface Mount
Operating Temperature [DATA_NEEDED: temperature range for WM-BCWE] [DATA_NEEDED: operating temperature range for standard grade]
Die Revision W (WM suffix) —
RoHS Status Compliant —
Operating Frequency 1600 MHz (DDR, 3200 Mbps) —
Memory Size — 4 Gbit
Memory Interface — Parallel
Clock Frequency — 1.33 GHz
VDD / VDDQ — 1.2 V +/-60 mV
VPP — 2.5 V, -125 mV/+250 mV
Internal Banks — 16
Refresh — 64 ms / 8192-cycle; 32 ms / 8192-cycle at 95C
I/O Type — 1.2 V pseudo open-drain
VREFDQ — On-die, internal, adjustable generation
Special Features — Temperature controlled refresh (TCR)
Access Time — [DATA_NEEDED: CAS latency / access time]

Datasheets & Resources

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