K4B4G1646D-BMH9 vs K4B4G1646D-BFMA Comparison
Detailed side-by-side comparison of K4B4G1646D-BMH9 by Samsung Electronics and K4B4G1646D-BFMA by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4B4G1646D-BMH9 | K4B4G1646D-BFMA |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR3L SDRAM | DDR3 SDRAM |
| Density | 4Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 |
| Number of Banks | 8 | 8 |
| Data Rate | 2133 Mb/s per pin | 1866 Mbps |
| Supply Voltage (VDD) | 1.35V | — |
| Supply Voltage (VDDQ) | 1.35V | — |
| Package | 96-ball FBGA (9x13mm) | 96-ball FBGA |
| Ball Pitch | 0.8mm | 0.8mm |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | — |
| CAS Latency | Programmable | Programmable |
| Burst Length | 8 and 4 | 8 and 4 (with burst chop) |
| RoHS Status | Compliant | — |
| Lead-Free | Yes | Yes |
| Halogen Free | Yes | Yes |
| Supply Voltage | — | 1.5V |
| On-Die Termination | — | Yes |
| Temperature Range | — | 0°C to 95°C (case) |
| RoHS | — | Compliant |