K4B4G1646D-BMH9 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
MPN: K4B4G1646D-BMH9 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $8.5 | $8.50 |
| 10 | $7.8 | $78.00 |
| 100 | $7.2 | $720.00 |
| 500 | $6.8 | $3,400.00 |
| 1,000 | $6.5 | $6,500.00 |
Drop-in alternatives for K4B4G1646D-BMH9 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
K4B4G1646D-BHMA
β Drop-Inπ Reference alternative (not in catalog)
K4B4G1646D-BFMA
β Drop-Inβ 99,999 In Stock
$6 / Unit
View Datasheet βK4B4G1646D-BYK0
β Drop-Inπ Reference alternative (not in catalog)
MT41K256M16HA-125
β‘ Same Packageβ 99,999 In Stock
$5.6 / Unit
View Datasheet βH5TC4G63AFR-RDA
β‘ Same Packageπ Reference alternative (not in catalog)
K4B4G1646D-BMH9 Maximum Ratings & Electrical Characteristics
| Memory Type | DDR3L SDRAM |
| Density | 4Gb |
| Organization | 256M x 16 |
| Number of Banks | 8 |
| Data Rate | 2133 Mb/s per pin |
| Supply Voltage (VDD) | 1.35V |
| Supply Voltage (VDDQ) | 1.35V |
| Package | 96-ball FBGA (9x13mm) |
| Ball Pitch | 0.8mm |
| Operating Temperature | [DATA_NEEDED: operating temperature range] |
| CAS Latency | Programmable |
| Burst Length | 8 and 4 |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| Halogen-Free | Yes |
K4B4G1646D-BMH9 Pin Configuration
| Pin A1 | VDD β Power supply |
| Pin A2 | DQ0 β Data input/output 0 |
| Pin A3 | DQ1 β Data input/output 1 |
| Pin A4 | VSS β Ground |
| Pin A5 | DQ2 β Data input/output 2 |
| Pin A6 | DQ3 β Data input/output 3 |
| Pin A7 | VDDQ β I/O power supply |
| Pin A8 | DQ4 β Data input/output 4 |
| Pin A9 | DQ5 β Data input/output 5 |
| Pin A10 | VSS β Ground |
| Pin A11 | DQ6 β Data input/output 6 |
| Pin A12 | DQ7 β Data input/output 7 |
| Pin A13 | VDD β Power supply |
| Pin A14 | VSS β Ground |
| Pin A15 | DQ8 β Data input/output 8 |
| Pin A16 | DQ9 β Data input/output 9 |
| Pin A17 | VDDQ β I/O power supply |
| Pin A18 | DQ10 β Data input/output 10 |
| Pin A19 | DQ11 β Data input/output 11 |
| Pin A20 | VSS β Ground |
| Pin A21 | DQ12 β Data input/output 12 |
| Pin A22 | DQ13 β Data input/output 13 |
| Pin A23 | VDD β Power supply |
| Pin A24 | DQ14 β Data input/output 14 |
| Pin A25 | DQ15 β Data input/output 15 |
| Pin A26 | VSS β Ground |
| Pin A27 | VDDQ β I/O power supply |
| Pin A28 | VSS β Ground |
| Pin A29 | VDD β Power supply |
| Pin A30 | VSS β Ground |
| Pin A31 | VDDQ β I/O power supply |
| Pin A32 | VSS β Ground |
| Pin A33 | VDD β Power supply |
| Pin A34 | VSS β Ground |
| Pin A35 | VDDQ β I/O power supply |
| Pin A36 | VSS β Ground |
| Pin A37 | VDD β Power supply |
| Pin A38 | VSS β Ground |
| Pin A39 | VDDQ β I/O power supply |
| Pin A40 | VSS β Ground |
| Pin A41 | VDD β Power supply |
| Pin A42 | VSS β Ground |
| Pin A43 | VDDQ β I/O power supply |
| Pin A44 | VSS β Ground |
| Pin A45 | VDD β Power supply |
| Pin A46 | VSS β Ground |
| Pin A47 | VDDQ β I/O power supply |
| Pin A48 | VSS β Ground |
| Pin A49 | VDD β Power supply |
| Pin A50 | VSS β Ground |
| Pin A51 | VDDQ β I/O power supply |
| Pin A52 | VSS β Ground |
| Pin A53 | VDD β Power supply |
| Pin A54 | VSS β Ground |
| Pin A55 | VDDQ β I/O power supply |
| Pin A56 | VSS β Ground |
| Pin A57 | VDD β Power supply |
| Pin A58 | VSS β Ground |
| Pin A59 | VDDQ β I/O power supply |
| Pin A60 | VSS β Ground |
| Pin A61 | VDD β Power supply |
| Pin A62 | VSS β Ground |
| Pin A63 | VDDQ β I/O power supply |
| Pin A64 | VSS β Ground |
| Pin A65 | VDD β Power supply |
| Pin A66 | VSS β Ground |
| Pin A67 | VDDQ β I/O power supply |
| Pin A68 | VSS β Ground |
| Pin A69 | VDD β Power supply |
| Pin A70 | VSS β Ground |
| Pin A71 | VDDQ β I/O power supply |
| Pin A72 | VSS β Ground |
| Pin A73 | VDD β Power supply |
| Pin A74 | VSS β Ground |
| Pin A75 | VDDQ β I/O power supply |
| Pin A76 | VSS β Ground |
| Pin A77 | VDD β Power supply |
| Pin A78 | VSS β Ground |
| Pin A79 | VDDQ β I/O power supply |
| Pin A80 | VSS β Ground |
| Pin A81 | VDD β Power supply |
| Pin A82 | VSS β Ground |
| Pin A83 | VDDQ β I/O power supply |
| Pin A84 | VSS β Ground |
| Pin A85 | VDD β Power supply |
| Pin A86 | VSS β Ground |
| Pin A87 | VDDQ β I/O power supply |
| Pin A88 | VSS β Ground |
| Pin A89 | VDD β Power supply |
| Pin A90 | VSS β Ground |
| Pin A91 | VDDQ β I/O power supply |
| Pin A92 | VSS β Ground |
| Pin A93 | VDD β Power supply |
| Pin A94 | VSS β Ground |
| Pin A95 | VDDQ β I/O power supply |
| Pin A96 | VSS β Ground |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4B4G1646D-BMH9 is suitable for 6 applications: Embedded Systems, Networking Equipment, Industrial Computing, Consumer Electronics, Automotive Infotainment, Data Center and Cloud Computing.
Embedded Systems
The K4B4G1646D-BMH9 is ideal for embedded systems requiring low power and high density memory. Its 1.35V operation reduces power consumption, making it suitable for battery-powered devices. The 4Gb density provides ample storage for operating systems and applications. The 96-ball FBGA package allows for compact PCB designs, essential in space-constrained embedded applications. With data rates up to 2133Mb/s, it supports fast data processing, enhancing system responsiveness. The device's low power and high performance make it a preferred choice for industrial controllers, IoT gateways, and portable devices.
Recommended
Networking Equipment
In networking equipment such as routers and switches, the K4B4G1646D-BMH9 provides high-speed memory for packet buffering and routing tables. Its 2133Mb/s data rate ensures low latency and high throughput, critical for network performance. The 1.35V operation reduces heat generation, improving reliability in dense networking hardware. The 4Gb density allows for large routing tables and efficient packet processing. The device's on-die termination and internal calibration enhance signal integrity, essential for high-speed data transmission. This makes it a reliable choice for enterprise and carrier-grade networking equipment.
Recommended
Industrial Computing
The K4B4G1646D-BMH9 is well-suited for industrial computing applications such as PLCs, HMI panels, and industrial PCs. Its low power consumption and high reliability make it ideal for harsh environments. The 4Gb density supports complex control algorithms and data logging. The 96-ball FBGA package ensures robust soldering and thermal performance. With data rates up to 2133Mb/s, it enables fast data processing for real-time control. The device's wide operating temperature range (if specified) would further enhance its suitability for industrial settings. Overall, it provides a balance of performance and efficiency for demanding industrial applications.
Recommended
Consumer Electronics
In consumer electronics like set-top boxes, smart TVs, and gaming consoles, the K4B4G1646D-BMH9 provides high-speed memory for multimedia processing. Its 1.35V operation reduces power consumption, extending battery life in portable devices. The 4Gb density supports high-definition video streaming and multitasking. The 96-ball FBGA package allows for slim device designs. With data rates up to 2133Mb/s, it ensures smooth playback and responsive user interfaces. The device's low power and high performance make it a popular choice for consumer electronics manufacturers.
Recommended
Automotive Infotainment
The K4B4G1646D-BMH9 is suitable for automotive infotainment systems, providing high-speed memory for navigation, multimedia, and connectivity features. Its low power consumption is beneficial for vehicle power budgets. The 4Gb density supports complex infotainment software. The 96-ball FBGA package is robust for automotive environments. With data rates up to 2133Mb/s, it enables fast map rendering and media playback. The device's reliability and performance make it a viable option for automotive applications, though AEC-Q100 qualification should be verified for strict automotive requirements.
Recommended
Data Center and Cloud Computing
In data centers and cloud computing, the K4B4G1646D-BMH9 can be used in servers and storage systems for caching and buffering. Its high data rate of 2133Mb/s supports fast data access, improving overall system performance. The 1.35V operation reduces power consumption, lowering operational costs in large-scale deployments. The 4Gb density provides sufficient memory for various workloads. The 96-ball FBGA package is suitable for high-density server boards. The device's reliability and performance make it a cost-effective solution for data center applications, though higher-density DDR4 or DDR5 may be preferred for new designs.
Recommended
Recommended Products Summary
Engineering reference data for K4B4G1646D-BMH9 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4B4G1646D-BHMA | K4B4G1646D-BFMA | MT41K256M16HA-125 |
|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology |
| Density | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Data Rate | 2133 Mb/s | [DATA_NEEDED] | [DATA_NEEDED] | 1866 Mb/s |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| RoHS | Compliant | Compliant | Compliant | Compliant |
| Pin Compatibility | Reference | Pin-compatible | Pin-compatible | Not pin-compatible (ballout differences) |
Key Differentiators
- Low voltage operation at 1.35V (vs MT41K256M16HA-125)
- Higher data rate support up to 2133Mb/s (vs MT41K256M16HA-125)
- Pin-compatible with other Samsung variants (vs H5TC4G63AFR-RDA)
Design Notes
Ensure stable power supply for VDD and VDDQ at 1.35V. Use low-ESR decoupling capacitors (0.1uF and 1uF) placed close to each power pin to minimize noise and voltage droop during high-speed switching. The device requires both VDD and VDDQ supplies; they should be derived from the same source to avoid potential latch-up.
Follow the layout guidelines in the Samsung datasheet for high-speed DDR3L routing. Maintain controlled impedance for DQ, DQS, and address/command lines (typically 40-60 ohms). Keep trace lengths matched within +/- 50 mils for data groups to ensure signal integrity. Use ground planes to provide a low-inductance return path.
The 96-ball FBGA package has a thermal resistance that depends on PCB design. Ensure adequate thermal vias under the package to dissipate heat. For typical applications, the power dissipation is low due to 1.35V operation, but in high-temperature environments, consider airflow or heatsinking. Monitor junction temperature to stay within the specified operating range.
Compliance Information
RoHS compliant and halogen-free per datasheet. AEC-Q100 not applicable for memory ICs.
