K4B4G1646D-BMH9 vs K4B4G1646D-BFMA Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4B4G1646D-BMH9 sa pamamagitan ng Samsung Electronics at K4B4G1646D-BFMA sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4B4G1646D-BMH9 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BMH9 ✓ NakahandaSamsung Electronics
K4B4G1646D-BFMA - 4Gb DDR3 SDRAM x16 96FBGA | Samsung
K4B4G1646D-BFMA ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4B4G1646D-BMH9 | K4B4G1646D-BFMA |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3L SDRAM | DDR3 SDRAM |
| Density | 4Gb | 4Gb |
| Organisasyon | 256M x 16 | 256M x 16 |
| Number of Banks | 8 | 8 |
| Rate ng Data | 2133 Mb/s per pin | 1866 Mbps |
| Supply Voltage (VDD) | 1.35V | — |
| Supply Voltage (VDDQ) | 1.35V | — |
| Packhaging | 96-ball FBGA (9x13mm) | 96-ball FBGA |
| Ball Pitch | 0.8mm | 0.8mm |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | — |
| Latensya ng CAS | Programmable | Programmable |
| Burst Length | 8 and 4 | 8 and 4 (with burst chop) |
| Tindminan RoHS | Compliant | — |
| Lead-Free | Yes | Yes |
| Wala sa Halogen | Yes | Yes |
| Volte ng Pagbibigay | — | 1.5V |
| On-Die Termination | — | Yes |
| Temperature Range | — | 0°C to 95°C (case) |
| RoHS | — | Compliant |