K4B4G1646D-BPH90 vs K4B4G1646D-BCK00 Comparison

Detailed side-by-side comparison of K4B4G1646D-BPH90 by Samsung Electronics and K4B4G1646D-BCK00 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4B4G1646D-BPH90 K4B4G1646D-BPH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung

K4B4G1646D-BPH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung

K4B4G1646D-BPH90 ✓ Active
Samsung Electronics
K4B4G1646D-BCK00 K4B4G1646D-BCK00 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung

K4B4G1646D-BCK00 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung

K4B4G1646D-BCK00 ✓ Active

Specification Comparison

Parameter K4B4G1646D-BPH90 K4B4G1646D-BCK00
Brand Samsung Electronics Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $7.60 $5.90
Memory Type DDR3L SDRAM DDR3L SDRAM
Density 4Gb 4 Gb
Organization 32M x 16 256M x 16
Number of Banks 8 8
Data Rate 2133 Mb/s per pin 1600 Mbps/pin
Supply Voltage 1.35V (DDR3L) 1.35V (1.283V to 1.45V)
Package 96FBGA 96-ball FBGA (13 x 9 mm, 0.8 mm pitch)
Operating Temperature 0°C to +85°C 0°C to 95°C (Tcase)
CAS Latency Programmable up to 14 11 (at 1600 Mbps)
Burst Length 8, 4 (with burst chop) 8, 4 (with burst chop)
On-Die Termination Yes —
ZQ Calibration Yes —
Auto Precharge Yes —
Asynchronous Reset Yes —
Data Mask Yes —
Lead-Free Yes Yes
Halogen Free Yes Yes
RoHS Compliant Yes —
Speed Grade — DDR3-1600 (800 MHz)
I/O Voltage — 1.35V
RoHS — Compliant

Datasheets & Resources

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