K4B4G1646D-BPH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
MPN: K4B4G1646D-BPH90 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $10.32 | $10.32 |
| 10 | $9.5 | $95.00 |
| 100 | $8.75 | $875.00 |
| 500 | $8.1 | $4,050.00 |
| 1,000 | $7.6 | $7,600.00 |
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View Datasheet βK4B4G1646D-BPH90 Maximum Ratings & Electrical Characteristics
| Memory Type | DDR3L SDRAM |
| Density | 4Gb |
| Organization | 32M x 16 |
| Number of Banks | 8 |
| Data Rate | 2133 Mb/s per pin |
| Supply Voltage | 1.35V (DDR3L) |
| Package | 96FBGA |
| Operating Temperature | 0Β°C to +85Β°C |
| CAS Latency | Programmable up to 14 |
| Burst Length | 8, 4 (with burst chop) |
| On-Die Termination | Yes |
| ZQ Calibration | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask | Yes |
| Lead-Free | Yes |
| Halogen-Free | Yes |
| RoHS Compliant | Yes |
K4B4G1646D-BPH90 Pin Configuration
| Pin A1 | VDD β Power supply (1.35V) |
| Pin A2 | DQ0 β Data input/output 0 |
| Pin A3 | DQ1 β Data input/output 1 |
| Pin A4 | VSS β Ground |
| Pin A5 | DQ2 β Data input/output 2 |
| Pin A6 | DQ3 β Data input/output 3 |
| Pin A7 | VDDQ β DQ power supply |
| Pin A8 | DQ4 β Data input/output 4 |
| Pin A9 | DQ5 β Data input/output 5 |
| Pin A10 | VSS β Ground |
| Pin A11 | DQ6 β Data input/output 6 |
| Pin A12 | DQ7 β Data input/output 7 |
| Pin A13 | VDD β Power supply |
| Pin B1 | VSS β Ground |
| Pin B2 | DQ8 β Data input/output 8 |
| Pin B3 | DQ9 β Data input/output 9 |
| Pin B4 | VDDQ β DQ power supply |
| Pin B5 | DQ10 β Data input/output 10 |
| Pin B6 | DQ11 β Data input/output 11 |
| Pin B7 | VSS β Ground |
| Pin B8 | DQ12 β Data input/output 12 |
| Pin B9 | DQ13 β Data input/output 13 |
| Pin B10 | VDDQ β DQ power supply |
| Pin B11 | DQ14 β Data input/output 14 |
| Pin B12 | DQ15 β Data input/output 15 |
| Pin B13 | VSS β Ground |
| Pin C1 | VDD β Power supply |
| Pin C2 | A0 β Address input 0 |
| Pin C3 | A1 β Address input 1 |
| Pin C4 | A2 β Address input 2 |
| Pin C5 | A3 β Address input 3 |
| Pin C6 | A4 β Address input 4 |
| Pin C7 | A5 β Address input 5 |
| Pin C8 | A6 β Address input 6 |
| Pin C9 | A7 β Address input 7 |
| Pin C10 | A8 β Address input 8 |
| Pin C11 | A9 β Address input 9 |
| Pin C12 | A10/AP β Address input 10 / Auto precharge |
| Pin C13 | VSS β Ground |
| Pin D1 | VSS β Ground |
| Pin D2 | A11 β Address input 11 |
| Pin D3 | A12 β Address input 12 |
| Pin D4 | A13 β Address input 13 |
| Pin D5 | BA0 β Bank address 0 |
| Pin D6 | BA1 β Bank address 1 |
| Pin D7 | BA2 β Bank address 2 |
| Pin D8 | RAS# β Row address strobe |
| Pin D9 | CAS# β Column address strobe |
| Pin D10 | WE# β Write enable |
| Pin D11 | CS# β Chip select |
| Pin D12 | CKE β Clock enable |
| Pin D13 | VDD β Power supply |
| Pin E1 | VDDQ β DQ power supply |
| Pin E2 | ODT β On-die termination |
| Pin E3 | CK β Clock (positive) |
| Pin E4 | CK# β Clock (negative) |
| Pin E5 | VSS β Ground |
| Pin E6 | DM0 β Data mask 0 |
| Pin E7 | DM1 β Data mask 1 |
| Pin E8 | VDDQ β DQ power supply |
| Pin E9 | RESET# β Asynchronous reset |
| Pin E10 | VSS β Ground |
| Pin E11 | ZQ β ZQ calibration |
| Pin E12 | VDD β Power supply |
| Pin E13 | VSS β Ground |
| Pin F1 | VSS β Ground |
| Pin F2 | VDD β Power supply |
| Pin F3 | VSS β Ground |
| Pin F4 | VDDQ β DQ power supply |
| Pin F5 | VSS β Ground |
| Pin F6 | VDDQ β DQ power supply |
| Pin F7 | VSS β Ground |
| Pin F8 | VDDQ β DQ power supply |
| Pin F9 | VSS β Ground |
| Pin F10 | VDDQ β DQ power supply |
| Pin F11 | VSS β Ground |
| Pin F12 | VDD β Power supply |
| Pin F13 | VSS β Ground |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4B4G1646D-BPH90 is suitable for 6 applications: Networking Equipment, Embedded Computing, Industrial Automation, Consumer Electronics, Data Center Servers, Automotive Infotainment.
Networking Equipment
The K4B4G1646D-BPH90 provides high-speed 2133Mb/s data transfer and low power consumption, making it ideal for routers and switches that require fast packet processing and large buffer memory. Its 4Gb density supports heavy traffic loads, while the 1.35V operation reduces thermal dissipation in dense chassis. The 96FBGA package allows compact board designs, and the on-die termination improves signal integrity in high-speed serial links.
Recommended
Embedded Computing
In embedded systems, the K4B4G1646D-BPH90 offers a balance of capacity and speed, with 4Gb density and 2133Mb/s data rate. Its low 1.35V supply is suitable for power-sensitive applications like industrial PCs and single-board computers. The 96FBGA package fits space-constrained designs, and the wide operating temperature range (0Β°C to +85Β°C) ensures reliability in harsh environments. The device's auto precharge and ZQ calibration simplify memory controller design.
Recommended
Industrial Automation
The K4B4G1646D-BPH90 is well-suited for industrial automation controllers that require reliable memory with high bandwidth. Its 2133Mb/s data rate enables fast data logging and real-time processing, while the 1.35V operation reduces power consumption in 24/7 operation. The 96FBGA package provides robustness against vibration, and the device's on-die termination helps maintain signal integrity in noisy industrial environments. The 0Β°C to +85Β°C temperature range covers most industrial applications.
Recommended
Consumer Electronics
For consumer devices like smart TVs and set-top boxes, the K4B4G1646D-BPH90 provides high-speed memory at low power, enhancing user experience with smooth video playback and fast app loading. The 4Gb density is sufficient for modern multimedia applications, and the 1.35V supply helps meet energy efficiency standards. The compact 96FBGA package enables slim device designs, and the device's low power consumption extends battery life in portable consumer electronics.
Recommended
Data Center Servers
In data center servers, the K4B4G1646D-BPH90 offers high bandwidth and capacity for virtualization and cloud computing workloads. Its 2133Mb/s data rate supports fast data access, while the 1.35V operation reduces power consumption in large server farms. The 96FBGA package allows high-density memory modules, and the device's on-die termination improves signal integrity in high-speed server memory channels. The 0Β°C to +85Β°C range is suitable for server environments.
Recommended
Automotive Infotainment
The K4B4G1646D-BPH90 is suitable for automotive infotainment systems that require high-speed memory for navigation, multimedia, and connectivity. Its 2133Mb/s data rate ensures smooth graphics and video playback, while the 1.35V supply reduces power consumption in vehicles. The 96FBGA package is compact and robust, and the device's wide temperature range (0Β°C to +85Β°C) covers most automotive cabin environments. On-die termination helps maintain signal integrity in the presence of electromagnetic interference.
Recommended
Recommended Products Summary
Engineering reference data for K4B4G1646D-BPH90 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4B4G1646D-BMH9 | K4B4G1646D-BCH90 | K4B4G1646D-BYH90 | MT41K256M16HA-125 | IS43TR16256A-125KBL | W634GU6RB-12 |
|---|---|---|---|---|---|---|---|
| Package | 96FBGA | 96FBGA | 96FBGA | 96FBGA | 96FBGA | 96FBGA | 96FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | ISSI | Winbond |
| Density | 4Gb | 4Gb | 4Gb | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 32M x 16 | 32M x 16 | 32M x 16 | 32M x 16 | 32M x 16 | 32M x 16 | 32M x 16 |
| Data Rate | 2133 Mb/s | 1866 Mb/s | 1600 Mb/s | 1866 Mb/s | 1600 Mb/s | 1600 Mb/s | 1866 Mb/s |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V |
| Operating Temperature | 0Β°C to +85Β°C | 0Β°C to +85Β°C | 0Β°C to +85Β°C | 0Β°C to +85Β°C | 0Β°C to +85Β°C | 0Β°C to +85Β°C | 0Β°C to +85Β°C |
| RoHS Compliant | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Higher data rate of 2133Mb/s (vs K4B4G1646D-BCH90)
- DDR3L low voltage operation (vs Standard DDR3 (1.5V))
- Samsung D-die process (vs Older die revisions)
Design Notes
The K4B4G1646D-BPH90 requires a 1.35V VDD supply and a separate VDDQ supply. Use low-impedance decoupling capacitors (e.g., 0.1uF and 1uF) placed close to each VDD/VDDQ pin to minimize power supply noise. Ensure the power plane has adequate copper area to handle transient currents during read/write operations.
Follow the layout guidelines in the Samsung datasheet for high-speed DDR3L signals. Maintain controlled impedance for DQ, DQS, and address/command lines (typically 40-60 ohms). Keep trace lengths matched within +/- 10 mils for data and strobe pairs to ensure signal integrity at 2133Mb/s.
The device operates up to +85Β°C, but ensure adequate airflow or heatsinking in high-temperature environments. The 96FBGA package has a thermal resistance that should be considered; use thermal vias under the package to improve heat dissipation to the PCB ground plane.
Compliance Information
Lead-free and halogen-free per datasheet. RoHS compliant. Not AEC-Q100 qualified.
