K4B4G1646D-BYH90 vs K4B4G1646D-BFMA Comparison
Detailed side-by-side comparison of K4B4G1646D-BYH90 by Samsung Electronics and K4B4G1646D-BFMA by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BYH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BYH90 ✓ ActiveSpecification Comparison
| Parameter | K4B4G1646D-BYH90 | K4B4G1646D-BFMA |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR3L SDRAM | DDR3 SDRAM |
| Density | 4 Gb | 4Gb |
| Organization | 512M x 16 | 256M x 16 |
| Data Rate | 2133 Mbps/pin | 1866 Mbps |
| Supply Voltage | 1.35V (1.283V to 1.45V) | 1.5V |
| I/O Interface | x16 | — |
| Number of Banks | 8 | 8 |
| Package | 96-ball FBGA (TFBGA) | 96-ball FBGA |
| Ball Pitch | 0.8 mm | 0.8mm |
| Operating Temperature | 0°C to +85°C | — |
| CAS Latency | Programmable (e.g., 11, 12, 13) | Programmable |
| Burst Length | 8 and 4 (with burst chop) | 8 and 4 (with burst chop) |
| On-Die Termination | Yes (ODT pin) | Yes |
| ZQ Calibration | Yes (240-ohm resistor to ground) | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Halogen Free | Yes | Yes |
| Temperature Range | — | 0°C to 95°C (case) |