K4B4G1646D-BYK0 vs K4B4G1646I-BYK0 Comparison
Detailed side-by-side comparison of K4B4G1646D-BYK0 by Samsung Electronics and K4B4G1646I-BYK0 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BYK0
K4B4G1646D-BYK0 - 4Gb DDR3L SDRAM 256Mx16 | Samsung
K4B4G1646D-BYK0 β ActiveSamsung Electronics
K4B4G1646I-BYK0
K4B4G1646I-BYK0 - 4Gb DDR3L SDRAM 256Mx16 | Samsung
K4B4G1646I-BYK0 β ActiveSpecification Comparison
| Parameter | K4B4G1646D-BYK0 | K4B4G1646I-BYK0 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.90 | $1.75 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gbit | β |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V (1.5 V compatible) | 1.35 V |
| Data Rate | 1600 Mbps (PC3-12800) | 1866 Mbps |
| Package | 96-ball FBGA | FBGA-96 |
| Operating Temperature | 0Β°C to 85Β°C | 0Β°C to 95Β°C (Tc) |
| CAS Latency | Programmable (e.g., 11, 10, 9) | [DATA_NEEDED: CAS Latency] |
| Burst Length | 8 (with burst chop 4) | 8, 4 |
| On-Die Termination | Yes | β |
| Lead-Free | Yes | Yes |
| Halogen-Free | Yes | β |
| RoHS Compliant | Yes | β |
| Number of Pins | 96 | β |
| Die Revision | D-die | β |
| Memory Size | β | 4 Gb |
| Clock Frequency | β | 933 MHz |
| Interface | β | Parallel |
| Number of Banks | β | 8 |
| RoHS | β | Compliant |
| Mounting Type | β | Surface Mount |