K4B4G1646D-BYK00 vs K4B4G1646E-BMMA Comparison
Detailed side-by-side comparison of K4B4G1646D-BYK00 by Samsung Electronics and K4B4G1646E-BMMA by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BYK00 - 4Gb DDR3L SDRAM 256Mx16 96FBGA | Samsung
K4B4G1646D-BYK00 ✓ Active
Specification Comparison
| Parameter | K4B4G1646D-BYK00 | K4B4G1646E-BMMA |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Unit Price (USD) | — | $16.08 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 |
| Data Rate | 1600 Mbps | 1600 Mbps |
| Supply Voltage | 1.35 V (also operates at 1.5 V) | 1.35 V |
| Package | 96-ball TFBGA | 96-FBGA (9x13 mm) |
| Number of Terminals | 96 | — |
| Operating Temperature | 0°C to 85°C | -40°C to +95°C |
| CAS Latency | Programmable | [DATA_NEEDED: CAS Latency] |
| Additional Features | Auto precharge, asynchronous reset, ZQ calibration, data mask, dynamic on-chip termination | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Halogen Free | Yes | — |
| Package Shape | RECTANGULAR | — |
| Temperature Grade | OTHER | — |
| Number of Banks | — | 8 |
| Interface | — | Parallel |
| Clock Frequency | — | 800 MHz |
| Burst Length | — | 8, 4 (with burst chop) |
| On-Die Termination | — | Yes (Dynamic ODT) |
| ZQ Calibration | — | Yes |