K4B4G1646E-BYK0 vs K4B4G1646D-BFMA Comparison
Detailed side-by-side comparison of K4B4G1646E-BYK0 by Samsung Electronics and K4B4G1646D-BFMA by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4B4G1646E-BYK0 | K4B4G1646D-BFMA |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.80 | $6.50 |
| Memory Type | DDR3L SDRAM | DDR3 SDRAM |
| Density | 4 Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V (1.283 V to 1.45 V) | 1.5V |
| Data Rate | DDR3-1600 (800 MHz) | 1866 Mbps |
| Package | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) | 96-ball FBGA |
| Operating Temperature | 0°C to +95°C (TC) | — |
| CAS Latency | 11 (CL-tRCD-tRP) | Programmable |
| Burst Length | 8 (fixed), 4 (burst chop) | 8 and 4 (with burst chop) |
| On-Die Termination | Yes (dynamic ODT) | Yes |
| ZQ Calibration | Yes | — |
| Auto Precharge | Yes | — |
| Self-Refresh | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| RoHS | Compliant | Compliant |
| Ball Pitch | — | 0.8mm |
| Number of Banks | — | 8 |
| Temperature Range | — | 0°C to 95°C (case) |
| Lead-Free | — | Yes |
| Halogen Free | — | Yes |