K4RAH086VB-BCWM vs K4RAH086VB-BIWM Comparison
Detailed side-by-side comparison of K4RAH086VB-BCWM by Samsung Electronics and K4RAH086VB-BIWM by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4RAH086VB-BCWM - DDR5 16Gb 5600Mbps SDRAM | Samsung Semiconductor
K4RAH086VB-BCWM ✓ Active
Specification Comparison
| Parameter | K4RAH086VB-BCWM | K4RAH086VB-BIWM |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | DRAM | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $44.55 | $4.85 |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM |
| Memory Size | 16 Gb | — |
| Organization | 2G x 8 | [DATA_NEEDED: organization x4/x8] |
| Data Rate | 5600 Mbps | 5600 Mbps per pin |
| Supply Voltage | 1.1 V | [DATA_NEEDED: VDD voltage] |
| Interface | DDR5 (parallel) | — |
| Package | FBGA-82 | — |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | DRAM (volatile) | — |
| Speed Grade | BCWM | — |
| Operating Temperature | Commercial temperature range (per datasheet) | [DATA_NEEDED: temperature range] |
| ECC | On-die ECC | — |
| Burst Length | 32 (BL32, DDR5 standard) | — |
| RoHS Status | Compliant | [DATA_NEEDED: RoHS status] |
| Lifecycle Status | Active | — |
| Sub-channel Architecture | Dual independent 32-bit sub-channels (per DDR5 spec) | — |
| Density | — | 16 Gb |
| Package Type | — | [DATA_NEEDED: package (FBGA, ball count)] |
| Bank Groups | — | [DATA_NEEDED: bank group count] |
| CAS Latency (CWL) | — | Programmable (per Samsung DDR5 16Gb B-die spec) |
| DLL | — | DLL Enabled mode operation |
| On-Die Termination | — | Yes (via Mode Register setting) |
| Internal Calibration | — | Yes (via MPC) |
| Asynchronous Reset | — | Yes |
| Posted CAS | — | Yes |
| Maximum Data Rate (family, per spec Rev1.0) | — | 4800 Mbps per pin (DDR5-4800, general applications) |