K4RAH086VB-BCWM - DDR5 16Gb 5600Mbps SDRAM | Samsung Semiconductor
MPN: K4RAH086VB-BCWM ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $6.2 | $6.20 |
| 10 | $5.8 | $58.00 |
| 100 | $5.35 | $535.00 |
| 500 | $4.95 | $2,475.00 |
| 1,000 | $4.6 | $4,600.00 |
Drop-in alternatives for K4RAH086VB-BCWM — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
K4RAH086VB-BCQK
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View Datasheet →K4RAH086VB-BIWM
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View Datasheet →K4RAH086VP-BCWM
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View Datasheet →K4RBH046VM-BCWM
✅ Drop-In✓ In Stock
$11.35 / Unit
View Datasheet →K4RAH086VB-BCWM Maximum Ratings & Electrical Characteristics
| Memory Type | DDR5 SDRAM |
| Memory Size | 16 Gb |
| Organization | 2G x 8 |
| Data Rate | 5600 Mbps |
| Supply Voltage | 1.1 V |
| Interface | DDR5 (parallel) |
| Package | FBGA-82 |
| Mounting Type | Surface Mount |
| Technology | DRAM (volatile) |
| Speed Grade | BCWM |
| Operating Temperature | Commercial temperature range (per datasheet) |
| ECC | On-die ECC |
| Burst Length | 32 (BL32, DDR5 standard) |
| RoHS Status | Compliant |
| Lifecycle Status | Active |
| Sub-channel Architecture | Dual independent 32-bit sub-channels (per DDR5 spec) |
K4RAH086VB-BCWM fbga-82 Pin Configuration Guide
Complete pinout information for K4RAH086VB-BCWM (fbga-82 package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for K4RAH086VB-BCWM.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4RAH086VB-BCWM is suitable for 6 applications: Enterprise Server DIMMs, High-Performance Desktop Memory, Networking Line Cards and Switches, Workstation and AI Edge Compute Modules, Embedded Compute and COM Express, Test, Measurement, and Data Acquisition Systems.
Enterprise Server DIMMs
The K4RAH086VB-BCWM fits DDR5 server RDIMM and LRDIMM designs targeting DDR5-5600 platforms from Intel Xeon and AMD EPYC. Its 16Gb 2G x 8 organization allows eight dies per 8GB rank with room for rank-dense module topologies, while 5600 Mbps/pin delivers the memory bandwidth server workloads demand. The 1.1 V supply cuts per-bit power roughly 30% versus DDR4, and Samsung's on-die ECC improves data integrity in always-on server environments. Placed on a registered DIMM behind the RCD and powered by the on-module 12V-to-1.1V PMIC, the die trains at 5600 Mbps with BL32 burst across dual 32-bit sub-channels. Verify the host platform QVL lists the BCWM bin before mass production.
Recommended
High-Performance Desktop Memory
Desktop UDIMM designers use the K4RAH086VB-BCWM where DDR5-5600 class bandwidth benefits gaming, content creation, and compute-accelerated consumer platforms. Each 16Gb x8 die doubles per-rank density versus 8Gb DDR4 chips, so a single-rank 16GB UDIMM needs only eight components, simplifying layout and reducing BOM cost. The 1.1 V core plus on-module PMIC gives enthusiast platforms fine-grained voltage control, while dual 32-bit sub-channels improve effective latency on short BL32 bursts common in gaming workloads. Designers should length-match DQ/DQS to the 5600 Mbps training window and tune ODT profiles in the CPU integrated memory controller for stable operation across DIMM population configurations.
Recommended
Networking Line Cards and Switches
Switch, router, and NIC line cards buffer packets in deep packet queues, where the K4RAH086VB-BCWM's 16Gb density and 5600 Mbps bandwidth support high-throughput forwarding planes. Its x8 organization pairs well with network ASICs and DPUs whose memory controllers map 64-bit or 72-bit (with ECC) DDR5 buses, and the dual sub-channel structure lets short control-plane accesses proceed on one sub-channel while bulk buffers use the other. The 1.1 V rail eases thermal budgets in dense 1U/2U chassis with limited airflow. Board designers should follow the ASIC vendor's fly-by CA routing rules and re-run DDR5 training after any SPD or ODT change to keep eye margins at 5600 Mbps.
Recommended
Workstation and AI Edge Compute Modules
Workstation motherboards and AI edge-compute modules that run large local models benefit from the K4RAH086VB-BCWM's combination of 16Gb density and 5600 Mbps bandwidth, which raises aggregate memory capacity without sacrificing throughput. SoC-class and workstation-class DDR5 controllers train this x8 die across dual sub-channels, and on-die ECC plus link-ECC features protect long-running inference jobs against soft errors. Because 5600 Mbps edges are tighter than 4800 Mbps, PCB stacks should control impedance on DQ fly-through routing and reference-plane continuity. The commercial BCWM bin suits climate-controlled deployments; for industrial-temperature edge enclosures, specify the same-die K4RAH086VB-BIWM industrial variant instead.
Recommended
Embedded Compute and COM Express
Computer-on-module (COM Express, SMARC) vendors adopt the K4RAH086VB-BCWM when their carrier ecosystem demands DDR5 bandwidth for industrial vision, robotics, and data-logging applications. Soldering sixteen 16Gb x8 dies yields 32 GB of on-module memory at 5600 Mbps, eliminating SO-DIMM sockets and their reliability concerns in vibration-prone environments. The 1.1 V supply simplifies the module's power tree, and on-die ECC supports the long service life expected in industrial settings. Layout teams should keep DQ/DQS length skew within the 5600 Mbps timing budget and pre-characterize training margins across the full temperature range; where the environment exceeds the commercial bin, substitute the industrial-binned K4RAH086VB-BIWM in the identical FBGA-82 footprint.
Recommended
Test, Measurement, and Data Acquisition Systems
High-speed oscilloscopes, logic analyzers, and streaming data-acquisition systems require deep capture memory with sustained write bandwidth, a match for the K4RAH086VB-BCWM's 16Gb density and 5600 Mbps per-pin rate. Multiple x8 dies on a wide DDR5 bus provide the acquisition engines tens of GB of continuous-write buffering, and the BL32 dual sub-channel architecture keeps short control transactions from stalling bulk waveform writes. The 1.1 V rail reduces instrument internal power dissipation, aiding fanless and low-noise designs. Instrument makers should validate ODT and drive-strength settings at both temperature extremes and re-verify 5600 Mbps eye diagrams after any memory-clock or termination-profile firmware update.
Recommended
Recommended Products Summary
Engineering reference data for K4RAH086VB-BCWM — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4RAH086VB-BCQK | K4RAH086VB-BIWM | K4RAH086VP-BCWM | K4RBH046VM-BCWM |
|---|---|---|---|---|---|
| Package | FBGA-82 | FBGA-82 - same | FBGA-82 - same | FBGA-82 - same | FBGA-82 - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Size | 16 Gb | 16 Gb | 16 Gb | 16 Gb | 16 Gb |
| Organization | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 4 |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM |
| Data Rate Class | 5600 Mbps | 5600 Mbps class | 5600 Mbps class | 5600 Mbps class | 5600 Mbps class |
| Supply Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| Temperature Bin | Commercial (BCWM) | [DATA_NEEDED] | Industrial bin (-I suffix) | [DATA_NEEDED] | Commercial (BCWM) |
| Lifecycle Status | Active | Active | Active | Active | Active |
Key Differentiators
- Deep global availability (vs K4RAH086VB-BIWM)
- Same-die industrial option available (vs K4RAH086VB-BIWM)
- x8 organization with bus-ECC-friendly topology (vs K4RBH046VM-BCWM)
Design Notes
At 5600 Mbps, DDR5 DQ/DQS eyes are the tightest constraint in the design. Route DQ/DQS with controlled impedance (typically 40 ohm per DDR5 guidelines), keep fly-through stubs to zero, and follow the CPU/ASIC vendor's DDR5 reference layout for CA fly-by skew targets. The Samsung datasheet's CA/CS compliance mask defines the receiver voltage/timing window your PHY must meet in single-data-rate CA mode. Validate eye diagrams with IBIS-AMI models at both ODT extremes before committing the PCB.
The K4RAH086VB-BCWM operates from a 1.1 V VDD rail, which in module designs is generated by the on-module PMIC (per DDR5 standards) rather than the motherboard. Ensure the PMIC can supply the peak IDD at 5600 Mbps for the full die count plus 20% margin, and follow Samsung's decoupling network recommendation from the K4RAH0x6VB datasheet. Estimated: a 16GB rank of eight dies drawing typical 16Gb DDR5 operating current requires low-impedance mid-plane power delivery to avoid rail droop during all-bank-write bursts.
Do not mix speed bins (e.g., BCWM and BIWM) in the same rank unless your memory controller QVL explicitly supports it; DDR5 training tables are bin-specific and mixed bins can fail write leveling. Also remember the BCWM is a commercial-temperature bin - for -40 C to +85 C ambient designs, substitute the industrial-binned K4RAH086VB-BIWM, which is footprint-identical. Always re-run memory training after any firmware, ODT, or SPD change to keep 5600 Mbps margins valid.
Compliance Information
RoHS compliance consistent with Samsung current-production DDR5 portfolio; explicit certificate not present in verified web data - confirm via Samsung product compliance portal for exact date code.
