K4RAH086VB-BIWM vs K4RAH165VB-BCWM Comparison
Detailed side-by-side comparison of K4RAH086VB-BIWM by Samsung Electronics and K4RAH165VB-BCWM by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4RAH086VB-BIWM | K4RAH165VB-BCWM |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.85 | $9.92 |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM (volatile DRAM) |
| Density | 16 Gb | — |
| Data Rate | 5600 Mbps per pin | — |
| Organization | [DATA_NEEDED: organization x4/x8] | — |
| Supply Voltage | [DATA_NEEDED: VDD voltage] | 1.1 V |
| Package Type | [DATA_NEEDED: package (FBGA, ball count)] | — |
| Mounting Type | Surface Mount | Surface Mount |
| Bank Groups | [DATA_NEEDED: bank group count] | — |
| CAS Latency (CWL) | Programmable (per Samsung DDR5 16Gb B-die spec) | — |
| DLL | DLL Enabled mode operation | — |
| On-Die Termination | Yes (via Mode Register setting) | — |
| Internal Calibration | Yes (via MPC) | — |
| Asynchronous Reset | Yes | Yes |
| Posted CAS | Yes | — |
| Operating Temperature | [DATA_NEEDED: temperature range] | 0C to +85C |
| RoHS Status | [DATA_NEEDED: RoHS status] | Compliant |
| Maximum Data Rate (family, per spec Rev1.0) | 4800 Mbps per pin (DDR5-4800, general applications) | — |
| Memory Size | — | 16 Gb |
| Memory Organization | — | 1G x 16 |
| Memory Interface | — | Parallel |
| Technology | — | DDR5 |
| Package | — | FBGA-106 |
| Maximum Data Rate (DDR5 family) | — | up to 7200 Mbps |
| On-die ECC | — | Yes |
| Auto Self-Refresh | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Speed Grade (suffix BCWM) | — | [DATA_NEEDED: speed grade / CAS latency] |
| Packaging | — | Tray |