K4RAH086VB-BIWM vs K4RAH165VB-BCWM Vergleich
Detaillierter Direktvergleich von K4RAH086VB-BIWM von Samsung Electronics und K4RAH165VB-BCWM von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K4RAH086VB-BIWM | K4RAH165VB-BCWM |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $4,85 | $9,92 |
| Speichertyp | DDR5 SDRAM | DDR5 SDRAM (volatile DRAM) |
| Density | 16 Gb | — |
| Datenrate | 5600 Mbps per pin | — |
| Speicherorganisation | [DATA_NEEDED: organization x4/x8] | — |
| Versorgungsspannung | [DATA_NEEDED: VDD voltage] | 1.1 V |
| Package Type | [DATA_NEEDED: package (FBGA, ball count)] | — |
| Montageart | Surface Mount | Surface Mount |
| Bank Groups | [DATA_NEEDED: bank group count] | — |
| CAS Latency (CWL) | Programmable (per Samsung DDR5 16Gb B-die spec) | — |
| DLL | DLL Enabled mode operation | — |
| On-Die Termination | Yes (via Mode Register setting) | — |
| Internal Calibration | Yes (via MPC) | — |
| Asynchronous Reset | Yes | Yes |
| Posted CAS | Yes | — |
| Betriebstemperatur | [DATA_NEEDED: temperature range] | 0C to +85C |
| RoHS-Status | [DATA_NEEDED: RoHS status] | Compliant |
| Maximum Data Rate (family, per spec Rev1.0) | 4800 Mbps per pin (DDR5-4800, general applications) | — |
| Speichergröße | — | 16 Gb |
| Memory Organization | — | 1G x 16 |
| Memory Interface | — | Parallel |
| Technology | — | DDR5 |
| Gehäuse | — | FBGA-106 |
| Maximum Data Rate (DDR5 family) | — | up to 7200 Mbps |
| On-die ECC | — | Yes |
| Auto Self-Refresh | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Speed Grade (suffix BCWM) | — | [DATA_NEEDED: speed grade / CAS latency] |
| Packaging | — | Tray |